IRLR120NPBF Todos los transistores

 

IRLR120NPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR120NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 97 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm

Encapsulados: TO252

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IRLR120NPBF datasheet

 ..1. Size:270K  international rectifier
irlr120npbf irlu120npbf.pdf pdf_icon

IRLR120NPBF

IRLR120NPbF IRLU120NPbF HEXFET Power MOSFET l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) D l Advanced Process Technology VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.185 l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize ID = 10A S advanced processing techniques to achieve the lowest possible on-resistance pe

 6.1. Size:173K  international rectifier
irlr120n.pdf pdf_icon

IRLR120NPBF

PD - 91541B IRLR/U120N HEXFET Power MOSFET Surface Mount (IRLR120N) D Straight Lead (IRLU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.185 Fully Avalanche Rated G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. Th

 6.2. Size:444K  infineon
auirlr120n.pdf pdf_icon

IRLR120NPBF

AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 100V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.185 175 C Operating Temperature Fast Switching Fully Avalanche Rated ID 10A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

 6.3. Size:1960K  cn vbsemi
irlr120ntr.pdf pdf_icon

IRLR120NPBF

IRLR120NTR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING

Otros transistores... IRLR014NPBF , IRLR014PBF , IRLR024NPBF , IRLR024PBF , IRLR024ZPBF , IRLR110 , IRLR110PBF , IRLR120 , 2N7002 , IRLR120PBF , IRLP3034PBF , IRLS3034-7PPBF , IRLS3034PBF , IRLS3036-7PPBF , IRLS3036PBF , IRLS3813PBF , IRLS4030-7PPBF .

History: AFN4172WSS8 | NDT90N03 | 2SJ319L | BSR302N

 

 

 

 

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