Справочник MOSFET. IRLR120NPBF

 

IRLR120NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLR120NPBF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 48 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
   Пороговое напряжение включения |Ugs(th)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 10 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 20 nC
   Время нарастания (tr): 35 ns
   Выходная емкость (Cd): 97 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.185 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRLR120NPBF

 

 

IRLR120NPBF Datasheet (PDF)

 ..1. Size:294K  international rectifier
 irlr120npbf irlu120npbf.pdf

IRLR120NPBF IRLR120NPBF

PD - 95082AIRLR/U120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance

 ..2. Size:270K  infineon
 irlr120npbf irlu120npbf.pdf

IRLR120NPBF IRLR120NPBF

IRLR120NPbFIRLU120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescriptionFifth Generation HEXFETs from International Rectifier utilize ID = 10ASadvanced processing techniques to achieve the lowest possibleon-resistance pe

 6.1. Size:173K  international rectifier
 irlr120n.pdf

IRLR120NPBF IRLR120NPBF

PD - 91541BIRLR/U120NHEXFET Power MOSFET Surface Mount (IRLR120N)D Straight Lead (IRLU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.185 Fully Avalanche RatedGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Th

 6.2. Size:444K  infineon
 auirlr120n.pdf

IRLR120NPBF IRLR120NPBF

AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 100V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.185 175C Operating Temperature Fast Switching Fully Avalanche Rated ID 10A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

 6.3. Size:1960K  cn vbsemi
 irlr120ntr.pdf

IRLR120NPBF IRLR120NPBF

IRLR120NTRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

 6.4. Size:241K  inchange semiconductor
 irlr120n.pdf

IRLR120NPBF IRLR120NPBF

isc N-Channel MOSFET Transistor IRLR120N, IIRLR120NFEATURESStatic drain-source on-resistance:RDS(on)185mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

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