IRLR120NPBF PDF and Equivalents Search

 

IRLR120NPBF Specs and Replacement

Type Designator: IRLR120NPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 97 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm

Package: TO252

IRLR120NPBF substitution

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IRLR120NPBF datasheet

 ..1. Size:270K  international rectifier
irlr120npbf irlu120npbf.pdf pdf_icon

IRLR120NPBF

IRLR120NPbF IRLU120NPbF HEXFET Power MOSFET l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) D l Advanced Process Technology VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.185 l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize ID = 10A S advanced processing techniques to achieve the lowest possible on-resistance pe... See More ⇒

 6.1. Size:173K  international rectifier
irlr120n.pdf pdf_icon

IRLR120NPBF

PD - 91541B IRLR/U120N HEXFET Power MOSFET Surface Mount (IRLR120N) D Straight Lead (IRLU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.185 Fully Avalanche Rated G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. Th... See More ⇒

 6.2. Size:444K  infineon
auirlr120n.pdf pdf_icon

IRLR120NPBF

AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 100V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.185 175 C Operating Temperature Fast Switching Fully Avalanche Rated ID 10A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D ... See More ⇒

 6.3. Size:1960K  cn vbsemi
irlr120ntr.pdf pdf_icon

IRLR120NPBF

IRLR120NTR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING... See More ⇒

Detailed specifications: IRLR014NPBF, IRLR014PBF, IRLR024NPBF, IRLR024PBF, IRLR024ZPBF, IRLR110, IRLR110PBF, IRLR120, 2N7002, IRLR120PBF, IRLP3034PBF, IRLS3034-7PPBF, IRLS3034PBF, IRLS3036-7PPBF, IRLS3036PBF, IRLS3813PBF, IRLS4030-7PPBF

Keywords - IRLR120NPBF MOSFET specs

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