IRLML5203PBF-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRLML5203PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max 98G 1(@V = -10V)GSmRDS(on) max 165 3 D(@V = -4.5V)GSQg (typical) 9.5 nCS 2ID -3.0 A Micro3TM(@T = 25C)AFeatures BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Env

IRLML5203PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl P-Channel MOSFETVDSS RDS(on) max (mW) IDl Surface Mountl Available in Tape & Reel-30V 98@VGS = -10V -3.0Al Low Gate Charge165@VGS = -4.5V -2.6Al Lead-Freel RoHS Compliant, Halogen-FreeDescriptionG 1These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the ext

Product specificationIRLML5203PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 98@VGS = -10V -3.0Al Surface Mount165@VGS = -4.5V -2.6Al Available in Tape & Reell Low Gate Chargel Lead-Freel Halogen-FreeDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve the

PD - 93967PROVISIONALIRLML5203HEXFET Power MOSFET)VDSS RDS(on) max (m) ID))) Ultra Low On-Resistance P-Channel MOSFET -30V 98@VGS = -10V -3.0A Surface Mount165@VGS = -4.5V -2.6A Available in Tape & Reel Low Gate ChargeDescriptionThese P-channel MOSFETs from International RectifierG 1utilize advanced processing techniques to achieve theextre

PD - 96166IRLML5203GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 98@VGS = -10V -3.0Al Surface Mount165@VGS = -4.5V -2.6Al Available in Tape & Reell Low Gate Chargel Lead-Freel Halogen-FreeDescription These P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve the extremel

RUMWUMW IRLML5203UMW IRLML5203UMW IRLML5203SOT-23 Plastic-Encapsulate MOSFETS SOT23 IRLML5203 P-Channel 30-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX \85m@-10 V1. BASE -3.0A-30V145m@-4.5V2. EMITTER 3. COLLECTORGeneral Description The UMW IRLML5203 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suit

IRLML5203 P-Ch 30V Fast Switching MOSFETs Product Summary Description The IRLML5203 is the high cell density trenched P-VDS -30 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 43 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The IRLML5203 meet the RoHS and Green Product requirement with full function reliability

IRLML5203

IRLML5203TRPBFwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(