IRLML5203PBF-1 Todos los transistores

 

IRLML5203PBF-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLML5203PBF-1
   Código: H*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 9.5 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 71 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.098 Ohm
   Paquete / Cubierta: SOT23

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IRLML5203PBF-1 Datasheet (PDF)

 ..1. Size:195K  international rectifier
irlml5203pbf-1.pdf

IRLML5203PBF-1
IRLML5203PBF-1

IRLML5203PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max 98G 1(@V = -10V)GSmRDS(on) max 165 3 D(@V = -4.5V)GSQg (typical) 9.5 nCS 2ID -3.0 A Micro3TM(@T = 25C)AFeatures BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Env

 2.1. Size:194K  international rectifier
irlml5203pbf.pdf

IRLML5203PBF-1
IRLML5203PBF-1

IRLML5203PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl P-Channel MOSFETVDSS RDS(on) max (mW) IDl Surface Mountl Available in Tape & Reel-30V 98@VGS = -10V -3.0Al Low Gate Charge165@VGS = -4.5V -2.6Al Lead-Freel RoHS Compliant, Halogen-FreeDescriptionG 1These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the ext

 2.2. Size:194K  infineon
irlml5203pbf.pdf

IRLML5203PBF-1
IRLML5203PBF-1

IRLML5203PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl P-Channel MOSFETVDSS RDS(on) max (mW) IDl Surface Mountl Available in Tape & Reel-30V 98@VGS = -10V -3.0Al Low Gate Charge165@VGS = -4.5V -2.6Al Lead-Freel RoHS Compliant, Halogen-FreeDescriptionG 1These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the ext

 2.3. Size:122K  tysemi
irlml5203pbf.pdf

IRLML5203PBF-1
IRLML5203PBF-1

Product specificationIRLML5203PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 98@VGS = -10V -3.0Al Surface Mount165@VGS = -4.5V -2.6Al Available in Tape & Reell Low Gate Chargel Lead-Freel Halogen-FreeDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve the

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