IRLML5203PBF-1 - описание и поиск аналогов

IRLML5203PbF-1 HEXFET Power MOSFET VDS -30 V RDS(on) max 98 G 1 (@V = -10V) GS m RDS(on) max 165 3 D (@V = -4.5V) GS Qg (typical) 9.5 nC S 2 ID -3.0 A Micro3TM (@T = 25 C) A Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Env

IRLML5203PbF l Ultra Low On-Resistance HEXFET Power MOSFET l P-Channel MOSFET VDSS RDS(on) max (mW) ID l Surface Mount l Available in Tape & Reel -30V 98@VGS = -10V -3.0A l Low Gate Charge 165@VGS = -4.5V -2.6A l Lead-Free l RoHS Compliant, Halogen-Free Description G 1 These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the ext

Product specification IRLML5203PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 98@VGS = -10V -3.0A l Surface Mount 165@VGS = -4.5V -2.6A l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the

PD - 93967 PROVISIONAL IRLML5203 HEXFET Power MOSFET ) VDSS RDS(on) max (m ) ID ) ) ) Ultra Low On-Resistance P-Channel MOSFET -30V 98@VGS = -10V -3.0A Surface Mount 165@VGS = -4.5V -2.6A Available in Tape & Reel Low Gate Charge Description These P-channel MOSFETs from International Rectifier G 1 utilize advanced processing techniques to achieve the extre

PD - 96166 IRLML5203GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 98@VGS = -10V -3.0A l Surface Mount 165@VGS = -4.5V -2.6A l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremel

R UMW UMW IRLML5203 UMW IRLML5203 UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS SOT 23 IRLML5203 P-Channel 30-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX 85m @-10 V 1. BASE -3. 0A -30V 145m @-4.5V 2. EMITTER 3. COLLECTOR General Description The UMW IRLML5203 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suit

IRLML5203 P-Ch 30V Fast Switching MOSFETs Product Summary Description The IRLML5203 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 43 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The IRLML5203 meet the RoHS and Green Product requirement with full function reliability

IRLML5203

IRLML5203TRPBF www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (