IRLML5203PBF-1 Datasheet. Specs and Replacement
Type Designator: IRLML5203PBF-1 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 71 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
Package: SOT23
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IRLML5203PBF-1 substitution
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IRLML5203PBF-1 datasheet
irlml5203pbf-1.pdf
IRLML5203PbF-1 HEXFET Power MOSFET VDS -30 V RDS(on) max 98 G 1 (@V = -10V) GS m RDS(on) max 165 3 D (@V = -4.5V) GS Qg (typical) 9.5 nC S 2 ID -3.0 A Micro3TM (@T = 25 C) A Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Env... See More ⇒
irlml5203pbf.pdf
IRLML5203PbF l Ultra Low On-Resistance HEXFET Power MOSFET l P-Channel MOSFET VDSS RDS(on) max (mW) ID l Surface Mount l Available in Tape & Reel -30V 98@VGS = -10V -3.0A l Low Gate Charge 165@VGS = -4.5V -2.6A l Lead-Free l RoHS Compliant, Halogen-Free Description G 1 These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the ext... See More ⇒
irlml5203pbf.pdf
Product specification IRLML5203PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 98@VGS = -10V -3.0A l Surface Mount 165@VGS = -4.5V -2.6A l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the ... See More ⇒
irlml5203.pdf
PD - 93967 PROVISIONAL IRLML5203 HEXFET Power MOSFET ) VDSS RDS(on) max (m ) ID ) ) ) Ultra Low On-Resistance P-Channel MOSFET -30V 98@VGS = -10V -3.0A Surface Mount 165@VGS = -4.5V -2.6A Available in Tape & Reel Low Gate Charge Description These P-channel MOSFETs from International Rectifier G 1 utilize advanced processing techniques to achieve the extre... See More ⇒
Detailed specifications: IRLML2803GPBF, IRLML2803PBF-1, IRLML2803PBF, IRLML5103GPBF, IRLML5103PBF, IRLML5103PBF-1, IRLML5203GPBF, IRLML5203PBF, HY1906P, IRLML6244TRPBF, IRLML6246TRPBF, IRLML6302GPBF, IRLML6302PBF, IRLML6302PBF-1, IRLML6344TRPBF, IRLML6346TRPBF, IRLML6401GPBF
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IRLML5203PBF-1 replacement
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