IRFI1010NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95418IRFI1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.012l Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely

PD - 9.1373AIRFI1010NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.012 Fully Avalanche RatedGID = 49ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI1010NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

PD - 94873IRFI1310NPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 100Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.036l Lead-FreeGDescriptionID = 24AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremel

PD - 9.1611AIRFI1310NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.036 Fully Avalanche RatedGDescriptionID = 24AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-

PD - 9.1222IRFI1310GHEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceVDSS = 100VIsolated PackageHigh Voltage Isolation = 2.5KVRMS RDS(on) = 0.04Sink to Lead Creepage Dist. = 4.8mmRepetitive Avalanche Rated175C Operating TemperatureID = 22ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniqu

IRFI1310NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.036 Fully Avalanche Rated Lead-Free ID 24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI1310NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(