IRFI1010NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFI1010NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 58 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 880 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO220F

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IRFI1010NPBF Datasheet (PDF)

..1. Size:229K international rectifier
irfi1010npbf.pdf

PD - 95418IRFI1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.012l Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely

..2. Size:229K infineon
irfi1010npbf.pdf

5.1. Size:109K international rectifier
irfi1010n.pdf

PD - 9.1373AIRFI1010NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.012 Fully Avalanche RatedGID = 49ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

5.2. Size:201K inchange semiconductor
irfi1010n.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI1010NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

9.1. Size:238K international rectifier
irfi1310npbf.pdf

PD - 94873IRFI1310NPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 100Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.036l Lead-FreeGDescriptionID = 24AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremel

9.2. Size:104K international rectifier
irfi1310n.pdf

PD - 9.1611AIRFI1310NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.036 Fully Avalanche RatedGDescriptionID = 24AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-

9.3. Size:178K international rectifier
irfi1310g.pdf

PD - 9.1222IRFI1310GHEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceVDSS = 100VIsolated PackageHigh Voltage Isolation = 2.5KVRMS RDS(on) = 0.04Sink to Lead Creepage Dist. = 4.8mmRepetitive Avalanche Rated175C Operating TemperatureID = 22ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniqu

9.4. Size:1850K infineon
irfi1310npbf.pdf

IRFI1310NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.036 Fully Avalanche Rated Lead-Free ID 24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

9.5. Size:222K inchange semiconductor
irfi1310n.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI1310NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

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