IRFI1010NPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFI1010NPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 58
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 49
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 130
nC
trⓘ - Rise Time: 66
nS
Cossⓘ -
Output Capacitance: 880
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
TO220F
IRFI1010NPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI1010NPBF
Datasheet (PDF)
..1. Size:229K international rectifier
irfi1010npbf.pdf 
PD - 95418IRFI1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.012l Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely
..2. Size:229K infineon
irfi1010npbf.pdf
PD - 95418IRFI1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.012l Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely
5.1. Size:109K international rectifier
irfi1010n.pdf
PD - 9.1373AIRFI1010NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.012 Fully Avalanche RatedGID = 49ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per
5.2. Size:201K inchange semiconductor
irfi1010n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI1010NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(
9.1. Size:238K international rectifier
irfi1310npbf.pdf
PD - 94873IRFI1310NPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 100Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.036l Lead-FreeGDescriptionID = 24AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremel
9.2. Size:104K international rectifier
irfi1310n.pdf
PD - 9.1611AIRFI1310NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.036 Fully Avalanche RatedGDescriptionID = 24AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-
9.3. Size:178K international rectifier
irfi1310g.pdf
PD - 9.1222IRFI1310GHEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceVDSS = 100VIsolated PackageHigh Voltage Isolation = 2.5KVRMS RDS(on) = 0.04Sink to Lead Creepage Dist. = 4.8mmRepetitive Avalanche Rated175C Operating TemperatureID = 22ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniqu
9.4. Size:1850K infineon
irfi1310npbf.pdf
IRFI1310NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.036 Fully Avalanche Rated Lead-Free ID 24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
9.5. Size:222K inchange semiconductor
irfi1310n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI1310NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(
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