Справочник MOSFET. IRFI1010NPBF

 

IRFI1010NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFI1010NPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 58 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 49 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 130 nC
   trⓘ - Время нарастания: 66 ns
   Cossⓘ - Выходная емкость: 880 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для IRFI1010NPBF

 

 

IRFI1010NPBF Datasheet (PDF)

 ..1. Size:229K  international rectifier
 irfi1010npbf.pdf

IRFI1010NPBF IRFI1010NPBF

PD - 95418IRFI1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.012l Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely

 ..2. Size:229K  infineon
 irfi1010npbf.pdf

IRFI1010NPBF IRFI1010NPBF

PD - 95418IRFI1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.012l Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely

 5.1. Size:109K  international rectifier
 irfi1010n.pdf

IRFI1010NPBF IRFI1010NPBF

PD - 9.1373AIRFI1010NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.012 Fully Avalanche RatedGID = 49ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

 5.2. Size:201K  inchange semiconductor
 irfi1010n.pdf

IRFI1010NPBF IRFI1010NPBF

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI1010NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

 9.1. Size:238K  international rectifier
 irfi1310npbf.pdf

IRFI1010NPBF IRFI1010NPBF

PD - 94873IRFI1310NPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 100Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.036l Lead-FreeGDescriptionID = 24AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremel

 9.2. Size:104K  international rectifier
 irfi1310n.pdf

IRFI1010NPBF IRFI1010NPBF

PD - 9.1611AIRFI1310NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.036 Fully Avalanche RatedGDescriptionID = 24AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-

 9.3. Size:178K  international rectifier
 irfi1310g.pdf

IRFI1010NPBF IRFI1010NPBF

PD - 9.1222IRFI1310GHEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceVDSS = 100VIsolated PackageHigh Voltage Isolation = 2.5KVRMS RDS(on) = 0.04Sink to Lead Creepage Dist. = 4.8mmRepetitive Avalanche Rated175C Operating TemperatureID = 22ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniqu

 9.4. Size:1850K  infineon
 irfi1310npbf.pdf

IRFI1010NPBF IRFI1010NPBF

IRFI1310NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.036 Fully Avalanche Rated Lead-Free ID 24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 9.5. Size:222K  inchange semiconductor
 irfi1310n.pdf

IRFI1010NPBF IRFI1010NPBF

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI1310NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: NCE30P28Q

 

 
Back to Top