IRFI1310NPBF Todos los transistores

 

IRFI1310NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFI1310NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 56 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 24 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 120 nC

Tiempo de elevación (tr): 56 nS

Conductancia de drenaje-sustrato (Cd): 450 pF

Resistencia drenaje-fuente RDS(on): 0.036 Ohm

Empaquetado / Estuche: TO220F

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IRFI1310NPBF Datasheet (PDF)

1.1. irfi1310n.pdf Size:104K _international_rectifier

IRFI1310NPBF
IRFI1310NPBF

PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.036? Fully Avalanche Rated G Description ID = 24A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resist

1.2. irfi1310npbf.pdf Size:238K _international_rectifier

IRFI1310NPBF
IRFI1310NPBF

PD - 94873 IRFI1310NPbF HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS … VDSS = 100V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.036Ω l Lead-Free G Description ID = 24A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremel

 2.1. irfi1310g.pdf Size:178K _international_rectifier

IRFI1310NPBF
IRFI1310NPBF

PD - 9.1222 IRFI1310G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.04? Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175C Operating Temperature ID = 22A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a

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