IRFI1310NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI1310NPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 56 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 24 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 120 nC
Tiempo de elevación (tr): 56 nS
Conductancia de drenaje-sustrato (Cd): 450 pF
Resistencia drenaje-fuente RDS(on): 0.036 Ohm
Empaquetado / Estuche: TO220F
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IRFI1310NPBF Datasheet (PDF)
1.1. irfi1310n.pdf 
Size:104K _international_rectifier
PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.036? Fully Avalanche Rated G Description ID = 24A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resist
1.2. irfi1310npbf.pdf Size:238K _international_rectifier
PD - 94873 IRFI1310NPbF HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS … VDSS = 100V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.036Ω l Lead-Free G Description ID = 24A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremel
2.1. irfi1310g.pdf Size:178K _international_rectifier
PD - 9.1222 IRFI1310G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.04? Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175C Operating Temperature ID = 22A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a
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