Справочник MOSFET. IRFI1310NPBF

 

IRFI1310NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFI1310NPBF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 56 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 24 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 120 nC
   Время нарастания (tr): 56 ns
   Выходная емкость (Cd): 450 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.036 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для IRFI1310NPBF

 

 

IRFI1310NPBF Datasheet (PDF)

 ..1. Size:238K  international rectifier
 irfi1310npbf.pdf

IRFI1310NPBF IRFI1310NPBF

PD - 94873IRFI1310NPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 100Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.036l Lead-FreeGDescriptionID = 24AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremel

 ..2. Size:1850K  infineon
 irfi1310npbf.pdf

IRFI1310NPBF IRFI1310NPBF

IRFI1310NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.036 Fully Avalanche Rated Lead-Free ID 24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 5.1. Size:104K  international rectifier
 irfi1310n.pdf

IRFI1310NPBF IRFI1310NPBF

PD - 9.1611AIRFI1310NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.036 Fully Avalanche RatedGDescriptionID = 24AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-

 5.2. Size:222K  inchange semiconductor
 irfi1310n.pdf

IRFI1310NPBF IRFI1310NPBF

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI1310NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

 6.1. Size:178K  international rectifier
 irfi1310g.pdf

IRFI1310NPBF IRFI1310NPBF

PD - 9.1222IRFI1310GHEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceVDSS = 100VIsolated PackageHigh Voltage Isolation = 2.5KVRMS RDS(on) = 0.04Sink to Lead Creepage Dist. = 4.8mmRepetitive Avalanche Rated175C Operating TemperatureID = 22ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniqu

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