IRFI1310NPBF MOSFET Datasheet: N-Ch, 100V, 24A. Full specification with pinout and replacement list

IRFI1310NPBF Specs and Replacement

   Type Designator: IRFI1310NPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO220F

IRFI1310NPBF substitution

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IRFI1310NPBF datasheet

..1. Size:238K international rectifier
irfi1310npbf.pdf pdf_icon

PD - 94873 IRFI1310NPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 100V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.036 l Lead-Free G Description ID = 24A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremel... See More ⇒

..2. Size:1850K infineon
irfi1310npbf.pdf pdf_icon

IRFI1310NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.036 Fully Avalanche Rated Lead-Free ID 24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l... See More ⇒

5.1. Size:104K international rectifier
irfi1310n.pdf pdf_icon

PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.036 Fully Avalanche Rated G Description ID = 24A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-... See More ⇒

5.2. Size:222K inchange semiconductor
irfi1310n.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI1310N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(... See More ⇒