IRFI3205PBF Todos los transistores

 

IRFI3205PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFI3205PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 64 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 1300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220F

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IRFI3205PBF datasheet

 ..1. Size:277K  international rectifier
 irfi3205pbf.pdf pdf_icon

IRFI3205PBF

PD - 95040A IRFI3205PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.008 G l Fully Avalanche Rated l Lead-Free ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

 ..2. Size:505K  infineon
 irfi3205pbf.pdf pdf_icon

IRFI3205PBF

IRFI3205PbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.008 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 64A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn

 6.1. Size:235K  international rectifier
 auirfi3205.pdf pdf_icon

IRFI3205PBF

PD - 97764 AUTOMOTIVE GRADE AUIRFI3205 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) max. 0.008 Sink to Lead Creepage Distance = 4.8mm 175 C Operating Temperature ID 64A Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualifi

 6.2. Size:107K  international rectifier
 irfi3205.pdf pdf_icon

IRFI3205PBF

PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

MOSTRAR MÁS

Otros transistores... IRFV460 , IRFW610B , IRFI630B , IRFW710B , IRFI064 , IRFI1010NPBF , IRFI1310NPBF , IRFI260 , IRFB4227 , IRFI360 , IRFI4110GPBF , IRFI4227PBF , IRFI4228PBF , IRFI4229PBF , IRFI4321PBF , IRFI4410ZGPBF , IRFI4410ZPBF .

History: SM2302 | ELM5J400RA

 

 

 

 

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