IRFI3205PBF MOSFET Datasheet: N-Ch, 55V, 64A. Full specification with pinout and replacement list

IRFI3205PBF Specs and Replacement

Type Designator: IRFI3205PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220F

IRFI3205PBF substitution

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IRFI3205PBF datasheet

..1. Size:277K international rectifier
irfi3205pbf.pdf pdf_icon

PD - 95040A IRFI3205PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.008 G l Fully Avalanche Rated l Lead-Free ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni... See More ⇒

..2. Size:505K infineon
irfi3205pbf.pdf pdf_icon

IRFI3205PbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.008 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 64A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn... See More ⇒

6.1. Size:235K international rectifier
auirfi3205.pdf pdf_icon

PD - 97764 AUTOMOTIVE GRADE AUIRFI3205 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) max. 0.008 Sink to Lead Creepage Distance = 4.8mm 175 C Operating Temperature ID 64A Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualifi... See More ⇒

6.2. Size:107K international rectifier
irfi3205.pdf pdf_icon

PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒