IRFI3205PBF Datasheet and Replacement

PD - 95040AIRFI3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.008Gl Fully Avalanche Ratedl Lead-FreeID = 64ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techni

IRFI3205PbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.008 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 64A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn

PD - 97764AUTOMOTIVE GRADEAUIRFI3205FeaturesHEXFET Power MOSFET Advanced Planar Technology Low On-ResistanceV(BR)DSS55V Isolated Package High Voltage Isolation = 2.5KVRMSRDS(on) max.0.008 Sink to Lead Creepage Distance = 4.8mm 175C Operating TemperatureID64A Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualifi

PD - 9.1374BIRFI3205HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 64ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI3205FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T