Справочник MOSFET. IRFI3205PBF

 

IRFI3205PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFI3205PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 63 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 64 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 170 nC
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 1300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для IRFI3205PBF

 

 

IRFI3205PBF Datasheet (PDF)

 ..1. Size:277K  international rectifier
 irfi3205pbf.pdf

IRFI3205PBF IRFI3205PBF

PD - 95040AIRFI3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.008Gl Fully Avalanche Ratedl Lead-FreeID = 64ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techni

 ..2. Size:505K  infineon
 irfi3205pbf.pdf

IRFI3205PBF IRFI3205PBF

IRFI3205PbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.008 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 64A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn

 6.1. Size:235K  international rectifier
 auirfi3205.pdf

IRFI3205PBF IRFI3205PBF

PD - 97764AUTOMOTIVE GRADEAUIRFI3205FeaturesHEXFET Power MOSFET Advanced Planar Technology Low On-ResistanceV(BR)DSS55V Isolated Package High Voltage Isolation = 2.5KVRMSRDS(on) max.0.008 Sink to Lead Creepage Distance = 4.8mm 175C Operating TemperatureID64A Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualifi

 6.2. Size:107K  international rectifier
 irfi3205.pdf

IRFI3205PBF IRFI3205PBF

PD - 9.1374BIRFI3205HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 64ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

 6.3. Size:201K  inchange semiconductor
 irfi3205.pdf

IRFI3205PBF IRFI3205PBF

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI3205FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

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