IRFI3205PBF - описание и поиск аналогов

PD - 95040A IRFI3205PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.008 G l Fully Avalanche Rated l Lead-Free ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

IRFI3205PbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.008 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 64A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn

PD - 97764 AUTOMOTIVE GRADE AUIRFI3205 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) max. 0.008 Sink to Lead Creepage Distance = 4.8mm 175 C Operating Temperature ID 64A Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualifi

PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI3205 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T