IRFI510GPBF Todos los transistores

 

IRFI510GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFI510GPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 81 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

IRFI510GPBF Datasheet (PDF)

 ..1. Size:1038K  vishay
 irfi510g irfi510gpbf sihfi510g.pdf pdf_icon

IRFI510GPBF

IRFI510G, SiHFI510GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = 10 V 0.54RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 8.3 175 C Operating TemperatureQgs (nC) 2.3 Dynamic dV/dt RatingQgd (nC) 3.8 Low

 6.1. Size:159K  international rectifier
 irfi510g.pdf pdf_icon

IRFI510GPBF

Document Number: 90178 www.vishay.com563Document Number: 90178 www.vishay.com564Document Number: 90178 www.vishay.com565Document Number: 90178 www.vishay.com566Document Number: 90178 www.vishay.com567Document Number: 90178 www.vishay.com568Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as part o

 6.2. Size:1040K  vishay
 irfi510g sihfi510g.pdf pdf_icon

IRFI510GPBF

IRFI510G, SiHFI510GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = 10 V 0.54RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 8.3 175 C Operating TemperatureQgs (nC) 2.3 Dynamic dV/dt RatingQgd (nC) 3.8 Low

 6.3. Size:274K  inchange semiconductor
 irfi510g.pdf pdf_icon

IRFI510GPBF

iscN-Channel MOSFET Transistor IRFI510GFEATURESLow drain-source on-resistance:RDS(ON) =0.54 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK2931 | FQPF13N50C

 

 
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