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IRFI510GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFI510GPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 81 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
   Paquete / Cubierta: TO220F
 

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IRFI510GPBF Datasheet (PDF)

 ..1. Size:1038K  vishay
 irfi510g irfi510gpbf sihfi510g.pdf pdf_icon

IRFI510GPBF

IRFI510G, SiHFI510GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = 10 V 0.54RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 8.3 175 C Operating TemperatureQgs (nC) 2.3 Dynamic dV/dt RatingQgd (nC) 3.8 Low

 6.1. Size:159K  international rectifier
 irfi510g.pdf pdf_icon

IRFI510GPBF

Document Number: 90178 www.vishay.com563Document Number: 90178 www.vishay.com564Document Number: 90178 www.vishay.com565Document Number: 90178 www.vishay.com566Document Number: 90178 www.vishay.com567Document Number: 90178 www.vishay.com568Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as part o

 6.2. Size:1040K  vishay
 irfi510g sihfi510g.pdf pdf_icon

IRFI510GPBF

IRFI510G, SiHFI510GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = 10 V 0.54RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 8.3 175 C Operating TemperatureQgs (nC) 2.3 Dynamic dV/dt RatingQgd (nC) 3.8 Low

 6.3. Size:274K  inchange semiconductor
 irfi510g.pdf pdf_icon

IRFI510GPBF

iscN-Channel MOSFET Transistor IRFI510GFEATURESLow drain-source on-resistance:RDS(ON) =0.54 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

MOSTRAR MÁS

Otros transistores... IRFI4110GPBF , IRFI4227PBF , IRFI4228PBF , IRFI4229PBF , IRFI4321PBF , IRFI4410ZGPBF , IRFI4410ZPBF , IRFI510G , 7N65 , IRFI520G , IRFI520GPBF , IRFI530G , IRFI530GPBF , IRFI530NPBF , IRFI540G , IRFI540GPBF , IRFI540NPBF .

History: 2SK3684-01S | SIR468DP | AP9965GEH | SSW80R160SFD | BSS84KW | 13N50L-TQ2-T

 

 
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