IRFI510GPBF PDF and Equivalents Search

 

IRFI510GPBF Specs and Replacement

Type Designator: IRFI510GPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm

Package: TO220F

IRFI510GPBF substitution

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IRFI510GPBF datasheet

 ..1. Size:1038K  vishay
 irfi510g irfi510gpbf sihfi510g.pdf pdf_icon

IRFI510GPBF

IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low... See More ⇒

 6.1. Size:159K  international rectifier
 irfi510g.pdf pdf_icon

IRFI510GPBF

Document Number 90178 www.vishay.com 563 Document Number 90178 www.vishay.com 564 Document Number 90178 www.vishay.com 565 Document Number 90178 www.vishay.com 566 Document Number 90178 www.vishay.com 567 Document Number 90178 www.vishay.com 568 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part o... See More ⇒

 6.2. Size:1040K  vishay
 irfi510g sihfi510g.pdf pdf_icon

IRFI510GPBF

IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low... See More ⇒

 6.3. Size:274K  inchange semiconductor
 irfi510g.pdf pdf_icon

IRFI510GPBF

iscN-Channel MOSFET Transistor IRFI510G FEATURES Low drain-source on-resistance RDS(ON) =0.54 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒

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Detailed specifications: IRFI4110GPBF, IRFI4227PBF, IRFI4228PBF, IRFI4229PBF, IRFI4321PBF, IRFI4410ZGPBF, IRFI4410ZPBF, IRFI510G, IRF630, IRFI520G, IRFI520GPBF, IRFI530G, IRFI530GPBF, IRFI530NPBF, IRFI540G, IRFI540GPBF, IRFI540NPBF

Keywords - IRFI510GPBF MOSFET specs

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