IRFI9610GPBF Todos los transistores

 

IRFI9610GPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFI9610GPBF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 66 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: TO220F

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IRFI9610GPBF datasheet

 ..1. Size:232K  international rectifier
 irfi9610gpbf.pdf pdf_icon

IRFI9610GPBF

PD - 95504 IRFI9610GPbF HEXFET Power MOSFET l Isolated Package D l High Voltage Isolation=2.5KVRMS VDSS = -200V l Sink to Lead Creepage Dist.=4.8mm l P-Channel RDS(on) = 3.0 l Dynamic dv/dt Rating G l Low thermal Resistance ID = -2.0A l Lead-Free S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast

 5.1. Size:170K  international rectifier
 irfi9610g.pdf pdf_icon

IRFI9610GPBF

PD - 94577 IRFI9610G HEXFET Power MOSFET l Isolated Package D l High Voltage Isolation=2.5KVRMS VDSS = -200V l Sink to Lead Creepage Dist.=4.8mm l P-Channel RDS(on) = 3.0 l Dynamic dv/dt Rating G l Low thermal Resistance ID = -2.0A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rugge

 5.2. Size:814K  vishay
 irfi9610g sihfi9610g.pdf pdf_icon

IRFI9610GPBF

IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 3.0 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 13 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Rating Qgd (nC) 7.3 Low Thermal Resista

 5.3. Size:790K  vishay
 irfi9610g-pbf sihfi9610g.pdf pdf_icon

IRFI9610GPBF

IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 3.0 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 13 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Rating Qgd (nC) 7.3 Low Thermal Resista

MOSTRAR MÁS

Otros transistores... IRFI840GLCPBF , IRFI840GPBF , IRFI9520G , IRFI9520GPBF , IRFI9530GPBF , IRFI9540G , IRFI9540GPBF , IRFI9610G , STP80NF70 , IRFI9620GPBF , IRFI9630GPBF , IRFI9634GPBF , IRFI9640GPBF , IRFI9Z14G , IRFI9Z14GPBF , IRFI9Z24G , IRFI9Z24GPBF .

History: FQP13N10L | SI3473CDV | SI3483DV

 

 

 

 

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