All MOSFET. IRFI9610GPBF Datasheet

 

IRFI9610GPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFI9610GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220F

 IRFI9610GPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFI9610GPBF Datasheet (PDF)

 ..1. Size:232K  international rectifier
 irfi9610gpbf.pdf

IRFI9610GPBF IRFI9610GPBF

PD - 95504IRFI9610GPbFHEXFET Power MOSFETl Isolated PackageDl High Voltage Isolation=2.5KVRMS VDSS = -200Vl Sink to Lead Creepage Dist.=4.8mml P-ChannelRDS(on) = 3.0l Dynamic dv/dt RatingGl Low thermal ResistanceID = -2.0Al Lead-FreeSDescriptionThird Generation HEXFETs from International Rectifier provide the designer with thebest combination of fast

 5.1. Size:170K  international rectifier
 irfi9610g.pdf

IRFI9610GPBF IRFI9610GPBF

PD - 94577IRFI9610GHEXFET Power MOSFETl Isolated PackageDl High Voltage Isolation=2.5KVRMS VDSS = -200Vl Sink to Lead Creepage Dist.=4.8mml P-ChannelRDS(on) = 3.0l Dynamic dv/dt RatingGl Low thermal ResistanceID = -2.0ASDescriptionThird Generation HEXFETs from International Rectifier provide the designer with thebest combination of fast switching, rugge

 5.2. Size:814K  vishay
 irfi9610g sihfi9610g.pdf

IRFI9610GPBF IRFI9610GPBF

IRFI9610G, SiHFI9610GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 3.0f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 13 P-ChannelQgs (nC) 3.2 Dynamic dV/dt RatingQgd (nC) 7.3 Low Thermal Resista

 5.3. Size:790K  vishay
 irfi9610g-pbf sihfi9610g.pdf

IRFI9610GPBF IRFI9610GPBF

IRFI9610G, SiHFI9610GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 3.0f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 13 P-ChannelQgs (nC) 3.2 Dynamic dV/dt RatingQgd (nC) 7.3 Low Thermal Resista

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: KIA18N50H-220F | 2SK3482-Z | KI2308DS | CSD83325L | HSBG2103

 

 
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