All MOSFET. IRFI9610GPBF Datasheet

 

IRFI9610GPBF Datasheet and Replacement


   Type Designator: IRFI9610GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220F
 

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IRFI9610GPBF Datasheet (PDF)

 ..1. Size:232K  international rectifier
 irfi9610gpbf.pdf pdf_icon

IRFI9610GPBF

PD - 95504IRFI9610GPbFHEXFET Power MOSFETl Isolated PackageDl High Voltage Isolation=2.5KVRMS VDSS = -200Vl Sink to Lead Creepage Dist.=4.8mml P-ChannelRDS(on) = 3.0l Dynamic dv/dt RatingGl Low thermal ResistanceID = -2.0Al Lead-FreeSDescriptionThird Generation HEXFETs from International Rectifier provide the designer with thebest combination of fast

 5.1. Size:170K  international rectifier
 irfi9610g.pdf pdf_icon

IRFI9610GPBF

PD - 94577IRFI9610GHEXFET Power MOSFETl Isolated PackageDl High Voltage Isolation=2.5KVRMS VDSS = -200Vl Sink to Lead Creepage Dist.=4.8mml P-ChannelRDS(on) = 3.0l Dynamic dv/dt RatingGl Low thermal ResistanceID = -2.0ASDescriptionThird Generation HEXFETs from International Rectifier provide the designer with thebest combination of fast switching, rugge

 5.2. Size:814K  vishay
 irfi9610g sihfi9610g.pdf pdf_icon

IRFI9610GPBF

IRFI9610G, SiHFI9610GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 3.0f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 13 P-ChannelQgs (nC) 3.2 Dynamic dV/dt RatingQgd (nC) 7.3 Low Thermal Resista

 5.3. Size:790K  vishay
 irfi9610g-pbf sihfi9610g.pdf pdf_icon

IRFI9610GPBF

IRFI9610G, SiHFI9610GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 3.0f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 13 P-ChannelQgs (nC) 3.2 Dynamic dV/dt RatingQgd (nC) 7.3 Low Thermal Resista

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Datasheet: IRFI840GLCPBF , IRFI840GPBF , IRFI9520G , IRFI9520GPBF , IRFI9530GPBF , IRFI9540G , IRFI9540GPBF , IRFI9610G , 20N50 , IRFI9620GPBF , IRFI9630GPBF , IRFI9634GPBF , IRFI9640GPBF , IRFI9Z14G , IRFI9Z14GPBF , IRFI9Z24G , IRFI9Z24GPBF .

History: SWP066R68E7T | UPA1913 | SM4485 | SVS7N60DD2TR | SHD225615 | IPB60R199CPA | P3606BEA

Keywords - IRFI9610GPBF MOSFET datasheet

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