IRFI9610GPBF PDF and Equivalents Search

 

IRFI9610GPBF Specs and Replacement

Type Designator: IRFI9610GPBF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220F

IRFI9610GPBF substitution

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IRFI9610GPBF datasheet

 ..1. Size:232K  international rectifier
 irfi9610gpbf.pdf pdf_icon

IRFI9610GPBF

PD - 95504 IRFI9610GPbF HEXFET Power MOSFET l Isolated Package D l High Voltage Isolation=2.5KVRMS VDSS = -200V l Sink to Lead Creepage Dist.=4.8mm l P-Channel RDS(on) = 3.0 l Dynamic dv/dt Rating G l Low thermal Resistance ID = -2.0A l Lead-Free S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast ... See More ⇒

 5.1. Size:170K  international rectifier
 irfi9610g.pdf pdf_icon

IRFI9610GPBF

PD - 94577 IRFI9610G HEXFET Power MOSFET l Isolated Package D l High Voltage Isolation=2.5KVRMS VDSS = -200V l Sink to Lead Creepage Dist.=4.8mm l P-Channel RDS(on) = 3.0 l Dynamic dv/dt Rating G l Low thermal Resistance ID = -2.0A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rugge... See More ⇒

 5.2. Size:814K  vishay
 irfi9610g sihfi9610g.pdf pdf_icon

IRFI9610GPBF

IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 3.0 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 13 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Rating Qgd (nC) 7.3 Low Thermal Resista... See More ⇒

 5.3. Size:790K  vishay
 irfi9610g-pbf sihfi9610g.pdf pdf_icon

IRFI9610GPBF

IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 3.0 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 13 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Rating Qgd (nC) 7.3 Low Thermal Resista... See More ⇒

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Detailed specifications: IRFI840GLCPBF, IRFI840GPBF, IRFI9520G, IRFI9520GPBF, IRFI9530GPBF, IRFI9540G, IRFI9540GPBF, IRFI9610G, STP80NF70, IRFI9620GPBF, IRFI9630GPBF, IRFI9634GPBF, IRFI9640GPBF, IRFI9Z14G, IRFI9Z14GPBF, IRFI9Z24G, IRFI9Z24GPBF

Keywords - IRFI9610GPBF MOSFET specs

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