IRLB8314PBF Todos los transistores

 ..1. Size:691K  international rectifier
 irlb8314pbf.pdf

IRLB8314PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30 V D Low Voltage Power Tools RDS(on) max 2.4 m (@ VGS = 10V) G (@ VGS = 4.5V) 3.2 S Benefits Qg (typical) 40 nC Best in Class Performance for UPS/Inverter Applications ID (Silicon Limited) 171 A Very Low RDS(on) at 4.5V VGS ID (Package Limited) 1

 ..2. Size:481K  infineon
 irlb8314pbf.pdf

IRLB8314PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30 V D Low Voltage Power Tools RDS(on) max 2.4 (@ VGS = 10V) m G (@ VGS = 4.5V) 3.2 Qg (typical) 40 nC S Benefits ID (Silicon Limited) 171 Best in Class Performance for UPS/Inverter Applications A ID (Package Limited) 130A Very Low RD

 9.1. Size:266K  international rectifier
 irlb8743pbf.pdf

PD - 96232 IRLB8743PbF HEXFET Power MOSFET Applications l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck 30V 3.2m 36nC Converters for Computer Processor Power l High Frequency Isolated DC-DC D Converters with Synchronous Rectification for Telecom and Industrial use S D G Benefits TO-220AB l Very Low RDS(on) at 4.5V VGS IRL

 9.2. Size:264K  international rectifier
 irlb8748pbf.pdf

PD - 96231 IRLB8748PbF HEXFET Power MOSFET Applications l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck 30V 4.8m 15nC Converters for Computer Processor Power l High Frequency Isolated DC-DC D Converters with Synchronous Rectification for Telecom and Industrial use S D G Benefits TO-220AB l Very Low RDS(on) at 4.5V VGS IRLB87

 9.3. Size:267K  international rectifier
 irlb8721pbf.pdf

PD - 97390 IRLB8721PbF Applications HEXFET Power MOSFET l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg (typ.) l High Frequency Synchronous Buck Converters for Computer Processor Power 30V 8.7m @VGS = 10V 7.6nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use Benefits S D l Very Low RDS(on) at 4.5V VGS G

 9.4. Size:2134K  cn vbsemi
 irlb8721p.pdf

IRLB8721P www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 98 30 82 nC 0.0045 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220AB D Server DC/DC G S G D S N-Channel MOSFET Top View AB

 9.5. Size:246K  inchange semiconductor
 irlb8743.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLB8743 IIRLB8743 FEATURES Static drain-source on-resistance RDS(on) 3.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 9.6. Size:246K  inchange semiconductor
 irlb8721.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLB8721 IIRLB8721 FEATURES Static drain-source on-resistance RDS(on) 8.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 9.7. Size:246K  inchange semiconductor
 irlb8748.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLB8748 IIRLB8748 FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM