IRLB8314PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLB8314PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 130
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 40
nC
trⓘ - Rise Time: 142
nS
Cossⓘ -
Output Capacitance: 890
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024
Ohm
Package:
TO220AB
IRLB8314PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLB8314PBF
Datasheet (PDF)
..1. Size:691K international rectifier
irlb8314pbf.pdf 
IRLB8314PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30 V D Low Voltage Power Tools RDS(on) max 2.4 m (@ VGS = 10V) G(@ VGS = 4.5V) 3.2 SBenefits Qg (typical) 40 nC Best in Class Performance for UPS/Inverter Applications ID (Silicon Limited) 171 A Very Low RDS(on) at 4.5V VGS ID (Package Limited) 1
..2. Size:481K infineon
irlb8314pbf.pdf
IRLB8314PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30 V DLow Voltage Power Tools RDS(on) max 2.4(@ VGS = 10V) mG(@ VGS = 4.5V) 3.2 Qg (typical) 40 nC SBenefits ID (Silicon Limited) 171 Best in Class Performance for UPS/Inverter Applications A ID (Package Limited) 130A Very Low RD
9.1. Size:266K international rectifier
irlb8743pbf.pdf
PD - 96232IRLB8743PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 3.2m 36nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRL
9.2. Size:264K international rectifier
irlb8748pbf.pdf
PD - 96231IRLB8748PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 4.8m 15nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRLB87
9.3. Size:267K international rectifier
irlb8721pbf.pdf
PD - 97390IRLB8721PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) max Qg (typ.)l High Frequency Synchronous BuckConverters for Computer Processor Power 30V 8.7m @VGS = 10V 7.6nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial UseBenefitsSDl Very Low RDS(on) at 4.5V VGSG
9.4. Size:264K infineon
irlb8748pbf.pdf
PD - 96231IRLB8748PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 4.8m 15nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRLB87
9.5. Size:267K infineon
irlb8721pbf.pdf
PD - 97390IRLB8721PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) max Qg (typ.)l High Frequency Synchronous BuckConverters for Computer Processor Power 30V 8.7m @VGS = 10V 7.6nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial UseBenefitsSDl Very Low RDS(on) at 4.5V VGSG
9.6. Size:2134K cn vbsemi
irlb8721p.pdf
IRLB8721Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewAB
9.7. Size:246K inchange semiconductor
irlb8743.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8743IIRLB8743FEATURESStatic drain-source on-resistance:RDS(on) 3.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
9.8. Size:246K inchange semiconductor
irlb8721.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8721IIRLB8721FEATURESStatic drain-source on-resistance:RDS(on) 8.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
9.9. Size:246K inchange semiconductor
irlb8748.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8748IIRLB8748FEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
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