All MOSFET. IRLB8314PBF Datasheet

 

IRLB8314PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLB8314PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 125 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
   Maximum Drain Current |Id|: 130 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 40 nC
   Rise Time (tr): 142 nS
   Drain-Source Capacitance (Cd): 890 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0024 Ohm
   Package: TO220AB

 IRLB8314PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLB8314PBF Datasheet (PDF)

 ..1. Size:691K  international rectifier
irlb8314pbf.pdf

IRLB8314PBF IRLB8314PBF

IRLB8314PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30 V D Low Voltage Power Tools RDS(on) max 2.4 m (@ VGS = 10V) G(@ VGS = 4.5V) 3.2 SBenefits Qg (typical) 40 nC Best in Class Performance for UPS/Inverter Applications ID (Silicon Limited) 171 A Very Low RDS(on) at 4.5V VGS ID (Package Limited) 1

 ..2. Size:481K  infineon
irlb8314pbf.pdf

IRLB8314PBF IRLB8314PBF

IRLB8314PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30 V DLow Voltage Power Tools RDS(on) max 2.4(@ VGS = 10V) mG(@ VGS = 4.5V) 3.2 Qg (typical) 40 nC SBenefits ID (Silicon Limited) 171 Best in Class Performance for UPS/Inverter Applications A ID (Package Limited) 130A Very Low RD

 9.1. Size:266K  international rectifier
irlb8743pbf.pdf

IRLB8314PBF IRLB8314PBF

PD - 96232IRLB8743PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 3.2m 36nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRL

 9.2. Size:264K  international rectifier
irlb8748pbf.pdf

IRLB8314PBF IRLB8314PBF

PD - 96231IRLB8748PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 4.8m 15nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRLB87

 9.3. Size:267K  international rectifier
irlb8721pbf.pdf

IRLB8314PBF IRLB8314PBF

PD - 97390IRLB8721PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) max Qg (typ.)l High Frequency Synchronous BuckConverters for Computer Processor Power 30V 8.7m @VGS = 10V 7.6nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial UseBenefitsSDl Very Low RDS(on) at 4.5V VGSG

 9.4. Size:264K  infineon
irlb8748pbf.pdf

IRLB8314PBF IRLB8314PBF

PD - 96231IRLB8748PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 4.8m 15nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRLB87

 9.5. Size:267K  infineon
irlb8721pbf.pdf

IRLB8314PBF IRLB8314PBF

PD - 97390IRLB8721PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) max Qg (typ.)l High Frequency Synchronous BuckConverters for Computer Processor Power 30V 8.7m @VGS = 10V 7.6nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial UseBenefitsSDl Very Low RDS(on) at 4.5V VGSG

 9.6. Size:2134K  cn vbsemi
irlb8721p.pdf

IRLB8314PBF IRLB8314PBF

IRLB8721Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewAB

 9.7. Size:246K  inchange semiconductor
irlb8743.pdf

IRLB8314PBF IRLB8314PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8743IIRLB8743FEATURESStatic drain-source on-resistance:RDS(on) 3.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 9.8. Size:246K  inchange semiconductor
irlb8721.pdf

IRLB8314PBF IRLB8314PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8721IIRLB8721FEATURESStatic drain-source on-resistance:RDS(on) 8.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 9.9. Size:246K  inchange semiconductor
irlb8748.pdf

IRLB8314PBF IRLB8314PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8748IIRLB8748FEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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