Справочник MOSFET. IRLB8314PBF

 

IRLB8314PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLB8314PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 40 nC
   trⓘ - Время нарастания: 142 ns
   Cossⓘ - Выходная емкость: 890 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRLB8314PBF

 

 

IRLB8314PBF Datasheet (PDF)

 ..1. Size:691K  international rectifier
irlb8314pbf.pdf

IRLB8314PBF IRLB8314PBF

IRLB8314PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30 V D Low Voltage Power Tools RDS(on) max 2.4 m (@ VGS = 10V) G(@ VGS = 4.5V) 3.2 SBenefits Qg (typical) 40 nC Best in Class Performance for UPS/Inverter Applications ID (Silicon Limited) 171 A Very Low RDS(on) at 4.5V VGS ID (Package Limited) 1

 ..2. Size:481K  infineon
irlb8314pbf.pdf

IRLB8314PBF IRLB8314PBF

IRLB8314PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30 V DLow Voltage Power Tools RDS(on) max 2.4(@ VGS = 10V) mG(@ VGS = 4.5V) 3.2 Qg (typical) 40 nC SBenefits ID (Silicon Limited) 171 Best in Class Performance for UPS/Inverter Applications A ID (Package Limited) 130A Very Low RD

 9.1. Size:266K  international rectifier
irlb8743pbf.pdf

IRLB8314PBF IRLB8314PBF

PD - 96232IRLB8743PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 3.2m 36nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRL

 9.2. Size:264K  international rectifier
irlb8748pbf.pdf

IRLB8314PBF IRLB8314PBF

PD - 96231IRLB8748PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 4.8m 15nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRLB87

 9.3. Size:267K  international rectifier
irlb8721pbf.pdf

IRLB8314PBF IRLB8314PBF

PD - 97390IRLB8721PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) max Qg (typ.)l High Frequency Synchronous BuckConverters for Computer Processor Power 30V 8.7m @VGS = 10V 7.6nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial UseBenefitsSDl Very Low RDS(on) at 4.5V VGSG

 9.4. Size:264K  infineon
irlb8748pbf.pdf

IRLB8314PBF IRLB8314PBF

PD - 96231IRLB8748PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 4.8m 15nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRLB87

 9.5. Size:267K  infineon
irlb8721pbf.pdf

IRLB8314PBF IRLB8314PBF

PD - 97390IRLB8721PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) max Qg (typ.)l High Frequency Synchronous BuckConverters for Computer Processor Power 30V 8.7m @VGS = 10V 7.6nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial UseBenefitsSDl Very Low RDS(on) at 4.5V VGSG

 9.6. Size:2134K  cn vbsemi
irlb8721p.pdf

IRLB8314PBF IRLB8314PBF

IRLB8721Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewAB

 9.7. Size:246K  inchange semiconductor
irlb8743.pdf

IRLB8314PBF IRLB8314PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8743IIRLB8743FEATURESStatic drain-source on-resistance:RDS(on) 3.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 9.8. Size:246K  inchange semiconductor
irlb8721.pdf

IRLB8314PBF IRLB8314PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8721IIRLB8721FEATURESStatic drain-source on-resistance:RDS(on) 8.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 9.9. Size:246K  inchange semiconductor
irlb8748.pdf

IRLB8314PBF IRLB8314PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8748IIRLB8748FEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top