IRL7833PBF Todos los transistores

 

IRL7833PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL7833PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de IRL7833PBF MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRL7833PBF Datasheet (PDF)

 ..1. Size:269K  international rectifier
 irl7833pbf irl7833lpbf irl7833spbf.pdf pdf_icon

IRL7833PBF

PD - 95270IRL7833PbFIRL7833SPbFIRL7833LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedance TO-220A

 ..2. Size:269K  international rectifier
 irl7833pbf irl7833spbf irl7833lpbf.pdf pdf_icon

IRL7833PBF

PD - 95270IRL7833PbFIRL7833SPbFIRL7833LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedance TO-220A

 7.1. Size:246K  inchange semiconductor
 irl7833.pdf pdf_icon

IRL7833PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL7833IIRL7833FEATURESStatic drain-source on-resistance:RDS(on) 3.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 7.2. Size:270K  inchange semiconductor
 irl7833s.pdf pdf_icon

IRL7833PBF

isc N-Channel MOSFET Transistor IRL7833SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 3.8m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATING

MOSTRAR MÁS

Otros transistores... IRLB4030PBF , IRLB8314PBF , IRLB8721PBF , IRLB8743PBF , IRLB8748PBF , IRL7472L1TRPBF , IRL7486MTRPBF , IRL7833LPBF , 8N60 , IRL7833SPBF , IRL620PBF , IRL620SPBF , IRL6283M , IRL6297SDPBF , IRL630PBF , IRL630SPBF , IRL6342PBF .

History: NTMS5P02R2SG | SI4831DY | AM10N30-600I

 

 
Back to Top

 


 
.