All MOSFET. IRL7833PBF Datasheet

 

IRL7833PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRL7833PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO220

 IRL7833PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL7833PBF Datasheet (PDF)

 ..1. Size:269K  international rectifier
irl7833pbf irl7833lpbf irl7833spbf.pdf

IRL7833PBF IRL7833PBF

PD - 95270IRL7833PbFIRL7833SPbFIRL7833LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedance TO-220A

 ..2. Size:269K  infineon
irl7833pbf irl7833spbf irl7833lpbf.pdf

IRL7833PBF IRL7833PBF

PD - 95270IRL7833PbFIRL7833SPbFIRL7833LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedance TO-220A

 7.1. Size:246K  inchange semiconductor
irl7833.pdf

IRL7833PBF IRL7833PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL7833IIRL7833FEATURESStatic drain-source on-resistance:RDS(on) 3.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 7.2. Size:270K  inchange semiconductor
irl7833s.pdf

IRL7833PBF IRL7833PBF

isc N-Channel MOSFET Transistor IRL7833SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 3.8m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATING

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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