All MOSFET. IRL7833PBF Datasheet

 

IRL7833PBF Datasheet and Replacement


   Type Designator: IRL7833PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO220
 

 IRL7833PBF substitution

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IRL7833PBF Datasheet (PDF)

 ..1. Size:269K  international rectifier
 irl7833pbf irl7833lpbf irl7833spbf.pdf pdf_icon

IRL7833PBF

PD - 95270IRL7833PbFIRL7833SPbFIRL7833LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedance TO-220A

 ..2. Size:269K  international rectifier
 irl7833pbf irl7833spbf irl7833lpbf.pdf pdf_icon

IRL7833PBF

PD - 95270IRL7833PbFIRL7833SPbFIRL7833LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedance TO-220A

 7.1. Size:246K  inchange semiconductor
 irl7833.pdf pdf_icon

IRL7833PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL7833IIRL7833FEATURESStatic drain-source on-resistance:RDS(on) 3.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 7.2. Size:270K  inchange semiconductor
 irl7833s.pdf pdf_icon

IRL7833PBF

isc N-Channel MOSFET Transistor IRL7833SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 3.8m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATING

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Datasheet: IRLB4030PBF , IRLB8314PBF , IRLB8721PBF , IRLB8743PBF , IRLB8748PBF , IRL7472L1TRPBF , IRL7486MTRPBF , IRL7833LPBF , IRFB7545 , IRL7833SPBF , IRL620PBF , IRL620SPBF , IRL6283M , IRL6297SDPBF , IRL630PBF , IRL630SPBF , IRL6342PBF .

History: NTMFS4C028N | IPB020NE7N3G

Keywords - IRL7833PBF MOSFET datasheet

 IRL7833PBF cross reference
 IRL7833PBF equivalent finder
 IRL7833PBF lookup
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 IRL7833PBF replacement

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