IRL1104PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL1104PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 167 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 104 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 257 nS

Cossⓘ - Capacitancia de salida: 1065 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220AB

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IRL1104PBF datasheet

 ..1. Size:167K  international rectifier
 irl1104pbf.pdf pdf_icon

IRL1104PBF

PD - 95404 IRL1104PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 104A S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced

 7.1. Size:95K  international rectifier
 irl1104.pdf pdf_icon

IRL1104PBF

PD -91805 IRL1104 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.008 G Fast Switching Fully Avalanche Rated ID = 104AU S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to

 7.2. Size:192K  international rectifier
 irl1104s.pdf pdf_icon

IRL1104PBF

PD -91840 PRELIMINARY IRL1104S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin

 7.3. Size:141K  international rectifier
 irl1104l irl1104s.pdf pdf_icon

IRL1104PBF

PD -91840 PRELIMINARY IRL1104S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin

MOSTRAR MÁS

Otros transistores... IRL3502PBF, IRL3502SPBF, IRL1004LPBF, IRL1004PBF, IRL1004SPBF, IRL1104, IRL1104L, IRL1104LPBF, IRF2807, IRL1104S, IRL1104SPBF, IRL1404LPBF, IRL1404PBF, IRL1404SPBF, IRL1404ZPBF, IRL2203NLPBF, IRL2203NPBF