Справочник MOSFET. IRL1104PBF

 

IRL1104PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRL1104PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 104 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 257 ns
   Cossⓘ - Выходная емкость: 1065 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRL1104PBF

 

 

IRL1104PBF Datasheet (PDF)

 ..1. Size:167K  international rectifier
 irl1104pbf.pdf

IRL1104PBF IRL1104PBF

PD - 95404IRL1104PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche Ratedl Lead-Free ID = 104ASDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced

 7.1. Size:95K  international rectifier
 irl1104.pdf

IRL1104PBF IRL1104PBF

PD -91805IRL1104HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008G Fast Switching Fully Avalanche RatedID = 104AUSDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to

 7.2. Size:192K  international rectifier
 irl1104s.pdf

IRL1104PBF IRL1104PBF

PD -91840PRELIMINARYIRL1104S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175C Operating Temperature RDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processin

 7.3. Size:141K  international rectifier
 irl1104l irl1104s.pdf

IRL1104PBF IRL1104PBF

PD -91840PRELIMINARYIRL1104S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175C Operating Temperature RDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processin

 7.4. Size:226K  international rectifier
 irl1104lpbf irl1104spbf.pdf

IRL1104PBF IRL1104PBF

PD -95576IRL1104SPbFIRL1104LPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL1104S) DVDSS = 40Vl Low-profile through-hole (IRL1104L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier util

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top