IRL1104PBF Specs and Replacement

Type Designator: IRL1104PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 104 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 257 nS

Cossⓘ - Output Capacitance: 1065 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220AB

IRL1104PBF substitution

- MOSFET ⓘ Cross-Reference Search

 

IRL1104PBF datasheet

 ..1. Size:167K  international rectifier
 irl1104pbf.pdf pdf_icon

IRL1104PBF

PD - 95404 IRL1104PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 104A S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced ... See More ⇒

 7.1. Size:95K  international rectifier
 irl1104.pdf pdf_icon

IRL1104PBF

PD -91805 IRL1104 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.008 G Fast Switching Fully Avalanche Rated ID = 104AU S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to... See More ⇒

 7.2. Size:192K  international rectifier
 irl1104s.pdf pdf_icon

IRL1104PBF

PD -91840 PRELIMINARY IRL1104S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin... See More ⇒

 7.3. Size:141K  international rectifier
 irl1104l irl1104s.pdf pdf_icon

IRL1104PBF

PD -91840 PRELIMINARY IRL1104S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin... See More ⇒

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Detailed specifications: IRL3502PBF, IRL3502SPBF, IRL1004LPBF, IRL1004PBF, IRL1004SPBF, IRL1104, IRL1104L, IRL1104LPBF, IRF2807, IRL1104S, IRL1104SPBF, IRL1404LPBF, IRL1404PBF, IRL1404SPBF, IRL1404ZPBF, IRL2203NLPBF, IRL2203NPBF

Keywords - IRL1104PBF MOSFET specs

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