IRL1404SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95148IRL1404SPbFIRL1404LPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche RatedRDS(on) = 0.004 Lead-Free GDescriptionID = 160A Seventh Generation HEXFET power MOSFETs fromSInternational Rectifier utilize advanced processingtechniqu

PD - 95148IRL1404SPbFIRL1404LPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche RatedRDS(on) = 0.004 Lead-Free GDescriptionID = 160A Seventh Generation HEXFET power MOSFETs fromSInternational Rectifier utilize advanced processingtechniqu

PD - 93854AIRL1404SIRL1404L Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 0.004 Fully Avalanche RatedGDescriptionSeventh Generation HEXFET power MOSFETs fromID = 160A International Rectifier utilize advanced processingStechniques to achieve e

PD - 96385AAUTOMOTIVE GRADEAUIRL1404SAUIRL1404LFeaturesHEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate DriveD Low On-Resistance V(BR)DSS40V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.4m Fast SwitchingG Fully Avalanche RatedID 160A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant Automotive Qualif

Isc N-Channel MOSFET Transistor IRL1404SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt