IRL1404SPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL1404SPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 160 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 270 nS
Cossⓘ - Capacitancia de salida: 1500 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de IRL1404SPBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRL1404SPBF datasheet
irl1404lpbf irl1404spbf.pdf
PD - 95148 IRL1404SPbF IRL1404LPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche Rated RDS(on) = 0.004 Lead-Free G Description ID = 160A Seventh Generation HEXFET power MOSFETs from S International Rectifier utilize advanced processing techniqu
irl1404spbf irl1404lpbf.pdf
PD - 95148 IRL1404SPbF IRL1404LPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche Rated RDS(on) = 0.004 Lead-Free G Description ID = 160A Seventh Generation HEXFET power MOSFETs from S International Rectifier utilize advanced processing techniqu
irl1404l irl1404s.pdf
PD - 93854A IRL1404S IRL1404L Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 0.004 Fully Avalanche Rated G Description Seventh Generation HEXFET power MOSFETs from ID = 160A International Rectifier utilize advanced processing S techniques to achieve e
auirl1404l auirl1404s.pdf
PD - 96385A AUTOMOTIVE GRADE AUIRL1404S AUIRL1404L Features HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive D Low On-Resistance V(BR)DSS 40V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 4m Fast Switching G Fully Avalanche Rated ID 160A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant Automotive Qualif
Otros transistores... IRL1104, IRL1104L, IRL1104LPBF, IRL1104PBF, IRL1104S, IRL1104SPBF, IRL1404LPBF, IRL1404PBF, P60NF06, IRL1404ZPBF, IRL2203NLPBF, IRL2203NPBF, IRL2203NSPBF, IRL2505PBF, IRL2505SPBF, IRL2703PBF, IRL2703SPBF
History: AP2761S-A-HF | JY09M
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH
Popular searches
tip130 | se9302 transistor | fr5305 datasheet | y2 transistor | 40n06 | bc108b | oc84 | c6090
