All MOSFET. IRL1404SPBF Datasheet

 

IRL1404SPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRL1404SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 270 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263

 IRL1404SPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL1404SPBF Datasheet (PDF)

 ..1. Size:646K  international rectifier
irl1404lpbf irl1404spbf.pdf

IRL1404SPBF
IRL1404SPBF

PD - 95148IRL1404SPbFIRL1404LPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche RatedRDS(on) = 0.004 Lead-Free GDescriptionID = 160A Seventh Generation HEXFET power MOSFETs fromSInternational Rectifier utilize advanced processingtechniqu

 ..2. Size:648K  infineon
irl1404spbf irl1404lpbf.pdf

IRL1404SPBF
IRL1404SPBF

PD - 95148IRL1404SPbFIRL1404LPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche RatedRDS(on) = 0.004 Lead-Free GDescriptionID = 160A Seventh Generation HEXFET power MOSFETs fromSInternational Rectifier utilize advanced processingtechniqu

 6.1. Size:133K  international rectifier
irl1404l irl1404s.pdf

IRL1404SPBF
IRL1404SPBF

PD - 93854AIRL1404SIRL1404L Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 0.004 Fully Avalanche RatedGDescriptionSeventh Generation HEXFET power MOSFETs fromID = 160A International Rectifier utilize advanced processingStechniques to achieve e

 6.2. Size:250K  international rectifier
auirl1404l auirl1404s.pdf

IRL1404SPBF
IRL1404SPBF

PD - 96385AAUTOMOTIVE GRADEAUIRL1404SAUIRL1404LFeaturesHEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate DriveD Low On-Resistance V(BR)DSS40V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.4m Fast SwitchingG Fully Avalanche RatedID 160A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant Automotive Qualif

 6.3. Size:257K  inchange semiconductor
irl1404s.pdf

IRL1404SPBF
IRL1404SPBF

Isc N-Channel MOSFET Transistor IRL1404SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NTD20P06L

 

 
Back to Top