IRL2203NPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL2203NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 116 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 160 nS

Cossⓘ - Capacitancia de salida: 1270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO220AB

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IRL2203NPBF datasheet

 ..1. Size:186K  international rectifier
 irl2203npbf.pdf pdf_icon

IRL2203NPBF

PD - 94953 IRL2203NPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 30V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 7.0m G l Fast Switching l Fully Avalanche Rated ID = 116A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

 6.1. Size:290K  international rectifier
 irl2203nlpbf irl2203nspbf.pdf pdf_icon

IRL2203NPBF

PD - 95219A IRL2203NSPbF IRL2203NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D VDSS = 30V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 7.0m G l 100% RG Tested l Lead-Free ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

 6.2. Size:221K  international rectifier
 irl2203n.pdf pdf_icon

IRL2203NPBF

PD - 91366 IRL2203N HEXFET Power MOSFET Advanced Process Technology D VDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 7.0m G Fast Switching Fully Avalanche Rated ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

 6.3. Size:290K  international rectifier
 irl2203nspbf irl2203nlpbf.pdf pdf_icon

IRL2203NPBF

PD - 95219A IRL2203NSPbF IRL2203NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D VDSS = 30V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 7.0m G l 100% RG Tested l Lead-Free ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

MOSTRAR MÁS

Otros transistores... IRL1104PBF, IRL1104S, IRL1104SPBF, IRL1404LPBF, IRL1404PBF, IRL1404SPBF, IRL1404ZPBF, IRL2203NLPBF, IRFB31N20D, IRL2203NSPBF, IRL2505PBF, IRL2505SPBF, IRL2703PBF, IRL2703SPBF, IRL2910PBF, IRL2910SPBF, IRL3102PBF