IRL2203NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRL2203NPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 180 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 116 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 60 nC
Время нарастания (tr): 160 ns
Выходная емкость (Cd): 1270 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.007 Ohm
Тип корпуса: TO220AB
Аналог (замена) для IRL2203NPBF
IRL2203NPBF Datasheet (PDF)
irl2203npbf.pdf
PD - 94953IRL2203NPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 30Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 7.0mGl Fast Switchingl Fully Avalanche RatedID = 116Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr
irl2203npbf.pdf
PD - 94953IRL2203NPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 30Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 7.0mGl Fast Switchingl Fully Avalanche RatedID = 116Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr
irl2203nlpbf irl2203nspbf.pdf
PD - 95219AIRL2203NSPbFIRL2203NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDVDSS = 30Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 7.0mGl 100% RG Testedl Lead-FreeID = 116ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced
irl2203n.pdf
PD - 91366IRL2203NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 7.0mG Fast Switching Fully Avalanche RatedID = 116A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resist
irl2203ns irl2203nl.pdf
PD - 94394IRL2203NSIRL2203NLHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 7.0m Fast SwitchingG Fully Avalanche RatedID = 116A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely lo
auirl2203n.pdf
AUTOMOTIVE GRADEAUIRL2203NFeatures HEXFET Power MOSFETl Advanced Planar TechnologyDV(BR)DSSl Low On-Resistance 30Vl Logic Level Gate Drivel Dynamic dV/dT RatingRDS(on) max.7ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited) 116Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 75Al Lead-Free, RoHS C
irl2203nspbf irl2203nlpbf.pdf
PD - 95219AIRL2203NSPbFIRL2203NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDVDSS = 30Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 7.0mGl 100% RG Testedl Lead-FreeID = 116ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced
irl2203n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2203NIIRL2203NFEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
irl2203ns.pdf
isc N-Channel MOSFET Transistor IRL2203NSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 7m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS
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