IRL2203NPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL2203NPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 180
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 116
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 60
nC
trⓘ - Rise Time: 160
nS
Cossⓘ -
Output Capacitance: 1270
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
TO220AB
IRL2203NPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL2203NPBF
Datasheet (PDF)
..1. Size:186K international rectifier
irl2203npbf.pdf 
PD - 94953IRL2203NPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 30Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 7.0mGl Fast Switchingl Fully Avalanche RatedID = 116Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr
..2. Size:186K infineon
irl2203npbf.pdf
PD - 94953IRL2203NPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 30Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 7.0mGl Fast Switchingl Fully Avalanche RatedID = 116Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr
6.1. Size:290K international rectifier
irl2203nlpbf irl2203nspbf.pdf
PD - 95219AIRL2203NSPbFIRL2203NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDVDSS = 30Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 7.0mGl 100% RG Testedl Lead-FreeID = 116ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced
6.2. Size:221K international rectifier
irl2203n.pdf
PD - 91366IRL2203NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 7.0mG Fast Switching Fully Avalanche RatedID = 116A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resist
6.3. Size:132K international rectifier
irl2203ns irl2203nl.pdf
PD - 94394IRL2203NSIRL2203NLHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 7.0m Fast SwitchingG Fully Avalanche RatedID = 116A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely lo
6.4. Size:211K international rectifier
auirl2203n.pdf
AUTOMOTIVE GRADEAUIRL2203NFeatures HEXFET Power MOSFETl Advanced Planar TechnologyDV(BR)DSSl Low On-Resistance 30Vl Logic Level Gate Drivel Dynamic dV/dT RatingRDS(on) max.7ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited) 116Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 75Al Lead-Free, RoHS C
6.5. Size:290K infineon
irl2203nspbf irl2203nlpbf.pdf
PD - 95219AIRL2203NSPbFIRL2203NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDVDSS = 30Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 7.0mGl 100% RG Testedl Lead-FreeID = 116ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced
6.6. Size:246K inchange semiconductor
irl2203n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2203NIIRL2203NFEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
6.7. Size:270K inchange semiconductor
irl2203ns.pdf
isc N-Channel MOSFET Transistor IRL2203NSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 7m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS
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