IRL2505PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL2505PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 104 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2 V

Qgⓘ - Carga de la puerta: 130 nC

trⓘ - Tiempo de subida: 160 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220AB

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IRL2505PBF datasheet

 ..1. Size:223K  international rectifier
 irl2505pbf.pdf pdf_icon

IRL2505PBF

PD -95622 IRL2505PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated ID = 104A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech

 7.1. Size:108K  international rectifier
 irl2505.pdf pdf_icon

IRL2505PBF

PD - 91325C IRL2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

 7.2. Size:178K  international rectifier
 irl2505s irl2505l.pdf pdf_icon

IRL2505PBF

PD - 91326D IRL2505S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

 7.3. Size:292K  international rectifier
 irl2505spbf irl2505lpbf.pdf pdf_icon

IRL2505PBF

PD - 95577 IRL2505LPbF IRL2505SPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRL2505S) D VDSS = 55V l Low-profile through-hole (IRL2505L) l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated ID = 104A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier ut

MOSTRAR MÁS

Otros transistores... IRL1104SPBF, IRL1404LPBF, IRL1404PBF, IRL1404SPBF, IRL1404ZPBF, IRL2203NLPBF, IRL2203NPBF, IRL2203NSPBF, IRF1405, IRL2505SPBF, IRL2703PBF, IRL2703SPBF, IRL2910PBF, IRL2910SPBF, IRL3102PBF, IRL3102SPBF, IRL3103D2PBF