IRL2505PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRL2505PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 104 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 160 ns
Cossⓘ - Выходная емкость: 1100 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: TO220AB
Аналог (замена) для IRL2505PBF
IRL2505PBF Datasheet (PDF)
irl2505pbf.pdf
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
irl2505pbf.pdf
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
irl2505.pdf
PD - 91325CIRL2505HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extre
irl2505s irl2505l.pdf
PD - 91326DIRL2505S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
irl2505spbf irl2505lpbf.pdf
PD - 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
irl2505lpbf irl2505spbf.pdf
PD - 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
irl2505.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2505IIRL2505FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
irl2505s.pdf
isc N-Channel MOSFET Transistor IRL2505SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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