IRL2505PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL2505PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 200
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 104
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 130
nC
trⓘ - Rise Time: 160
nS
Cossⓘ -
Output Capacitance: 1100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
TO220AB
IRL2505PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL2505PBF
Datasheet (PDF)
..1. Size:223K international rectifier
irl2505pbf.pdf 
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
..2. Size:223K infineon
irl2505pbf.pdf
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
7.1. Size:108K international rectifier
irl2505.pdf
PD - 91325CIRL2505HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extre
7.2. Size:178K international rectifier
irl2505s irl2505l.pdf
PD - 91326DIRL2505S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
7.3. Size:292K international rectifier
irl2505spbf irl2505lpbf.pdf
PD - 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
7.4. Size:292K infineon
irl2505lpbf irl2505spbf.pdf
PD - 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
7.5. Size:245K inchange semiconductor
irl2505.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2505IIRL2505FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
7.6. Size:251K inchange semiconductor
irl2505s.pdf
isc N-Channel MOSFET Transistor IRL2505SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
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