IRL3102PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3102PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 61 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 0.7 V

Qgⓘ - Carga de la puerta: 58 nC

trⓘ - Tiempo de subida: 130 nS

Cossⓘ - Capacitancia de salida: 1000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: TO220AB

 Búsqueda de reemplazo de IRL3102PBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRL3102PBF datasheet

 ..1. Size:134K  international rectifier
 irl3102pbf.pdf pdf_icon

IRL3102PBF

PD- 95658 IRL3102PbF HEXFET Power MOSFET l Advanced Process Technology D l Optimized for 4.5V-7.0V Gate Drive VDSS = 20V l Ideal for CPU Core DC-DC Converters l Fast Switching RDS(on) = 0.013 l Lead-Free G Description ID = 61A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing

 7.1. Size:96K  international rectifier
 irl3102.pdf pdf_icon

IRL3102PBF

PD- 9.1694A IRL3102 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Optimized for 4.5V-7.0V Gate Drive VDSS = 20V Ideal for CPU Core DC-DC Converters Fast Switching RDS(on) = 0.013 G Description ID = 61A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing tech

 7.2. Size:326K  international rectifier
 irl3102spbf.pdf pdf_icon

IRL3102PBF

PD- 95589 IRL3102SPbF HEXFET Power MOSFET D VDSS = 20V RDS(on) = 0.013 G ID = 61A Lead-Free S www.irf.com 1 07/20/04 IRL3102SPbF 2 www.irf.com IRL3102SPbF www.irf.com 3 IRL3102SPbF 4 www.irf.com IRL3102SPbF www.irf.com 5 IRL3102SPbF 6 www.irf.com IRL3102SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Induct

 7.3. Size:129K  international rectifier
 irl3102s.pdf pdf_icon

IRL3102PBF

PD 9.1691A IRL3102S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount VDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters RDS(on) = 0.013W Fast Switching G ID = 61A S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques c

MOSTRAR MÁS

Otros transistores... IRL2203NPBF, IRL2203NSPBF, IRL2505PBF, IRL2505SPBF, IRL2703PBF, IRL2703SPBF, IRL2910PBF, IRL2910SPBF, IRF9640, IRL3102SPBF, IRL3103D2PBF, IRL3103LPBF, IRL3103PBF, IRL3103SPBF, IRL3202PBF, IRL3302SPBF, IRL3303LPBF