IRL3102PBF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRL3102PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 89 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 61 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 130 ns
Cossⓘ - Выходная емкость: 1000 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
Тип корпуса: TO220AB
- подбор MOSFET транзистора по параметрам
IRL3102PBF Datasheet (PDF)
irl3102pbf.pdf

PD- 95658IRL3102PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Optimized for 4.5V-7.0V Gate DriveVDSS = 20Vl Ideal for CPU Core DC-DC Convertersl Fast SwitchingRDS(on) = 0.013l Lead-FreeGDescriptionID = 61AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing
irl3102.pdf

PD- 9.1694AIRL3102PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Optimized for 4.5V-7.0V Gate DriveVDSS = 20V Ideal for CPU Core DC-DC Converters Fast SwitchingRDS(on) = 0.013GDescriptionID = 61AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing tech
irl3102spbf.pdf

PD- 95589IRL3102SPbFHEXFET Power MOSFETDVDSS = 20VRDS(on) = 0.013GID = 61A Lead-FreeSwww.irf.com 107/20/04IRL3102SPbF2 www.irf.comIRL3102SPbFwww.irf.com 3IRL3102SPbF4 www.irf.comIRL3102SPbFwww.irf.com 5IRL3102SPbF6 www.irf.comIRL3102SPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Induct
irl3102s.pdf

PD 9.1691AIRL3102SPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface MountVDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC ConvertersRDS(on) = 0.013W Fast SwitchingGID = 61ASDescriptionThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters. Advanced processing techniquesc
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRLML5203 | BSC040N10NS5 | ME2308S | HTJ500N03 | DAMH75N500H | RFD14N06LSM | IXFP18N65X2
History: IRLML5203 | BSC040N10NS5 | ME2308S | HTJ500N03 | DAMH75N500H | RFD14N06LSM | IXFP18N65X2



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