All MOSFET. IRL3102PBF Datasheet

 

IRL3102PBF Datasheet and Replacement


   Type Designator: IRL3102PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 58 nC
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO220AB
 

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IRL3102PBF Datasheet (PDF)

 ..1. Size:134K  international rectifier
irl3102pbf.pdf pdf_icon

IRL3102PBF

PD- 95658IRL3102PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Optimized for 4.5V-7.0V Gate DriveVDSS = 20Vl Ideal for CPU Core DC-DC Convertersl Fast SwitchingRDS(on) = 0.013l Lead-FreeGDescriptionID = 61AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing

 7.1. Size:96K  international rectifier
irl3102.pdf pdf_icon

IRL3102PBF

PD- 9.1694AIRL3102PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Optimized for 4.5V-7.0V Gate DriveVDSS = 20V Ideal for CPU Core DC-DC Converters Fast SwitchingRDS(on) = 0.013GDescriptionID = 61AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing tech

 7.2. Size:326K  international rectifier
irl3102spbf.pdf pdf_icon

IRL3102PBF

PD- 95589IRL3102SPbFHEXFET Power MOSFETDVDSS = 20VRDS(on) = 0.013GID = 61A Lead-FreeSwww.irf.com 107/20/04IRL3102SPbF2 www.irf.comIRL3102SPbFwww.irf.com 3IRL3102SPbF4 www.irf.comIRL3102SPbFwww.irf.com 5IRL3102SPbF6 www.irf.comIRL3102SPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Induct

 7.3. Size:129K  international rectifier
irl3102s.pdf pdf_icon

IRL3102PBF

PD 9.1691AIRL3102SPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface MountVDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC ConvertersRDS(on) = 0.013W Fast SwitchingGID = 61ASDescriptionThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters. Advanced processing techniquesc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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