IRL3103SPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3103SPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 94 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 64 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1 V

Qgⓘ - Carga de la puerta: 33 nC

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 650 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO263

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IRL3103SPBF datasheet

 ..1. Size:649K  international rectifier
 irl3103lpbf irl3103spbf.pdf pdf_icon

IRL3103SPBF

PD - 95150 IRL3103SPbF IRL3103LPbF Advanced Process Technology Surface Mount (IRL3103S) HEXFET Power MOSFET Low-profile through-hole (IRL3103L) 175 C Operating Temperature D VDSS = 30V Fast Switching Fully Avalanche Rated RDS(on) = 12m Lead-Free G Description Advanced HEXFET Power MOSFETs from International ID = 64A Rectifier utilize advanced processing technique

 6.1. Size:125K  international rectifier
 irl3103s irl3103l.pdf pdf_icon

IRL3103SPBF

PD - 94162 IRL3103S IRL3103L Advanced Process Technology Surface Mount (IRL3103S) HEXFET Power MOSFET Low-profile through-hole (IRL3103L) D 175 C Operating Temperature VDSS = 30V Fast Switching Fully Avalanche Rated RDS(on) = 12m Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ID = 64A achieve ext

 6.2. Size:251K  inchange semiconductor
 irl3103s.pdf pdf_icon

IRL3103SPBF

isc N-Channel MOSFET Transistor IRL3103S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 6.3. Size:252K  inchange semiconductor
 irl3103s(2).pdf pdf_icon

IRL3103SPBF

isc N-Channel MOSFET Transistor IRL3103S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

MOSTRAR MÁS

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