IRL3103SPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL3103SPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 94
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 64
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 33
nC
trⓘ - Rise Time: 120
nS
Cossⓘ -
Output Capacitance: 650
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
TO263
IRL3103SPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL3103SPBF
Datasheet (PDF)
..1. Size:649K international rectifier
irl3103lpbf irl3103spbf.pdf
PD - 95150IRL3103SPbFIRL3103LPbF Advanced Process Technology Surface Mount (IRL3103S)HEXFET Power MOSFET Low-profile through-hole (IRL3103L) 175C Operating Temperature DVDSS = 30V Fast Switching Fully Avalanche RatedRDS(on) = 12m Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from InternationalID = 64ARectifier utilize advanced processing technique
6.1. Size:125K international rectifier
irl3103s irl3103l.pdf
PD - 94162IRL3103SIRL3103L Advanced Process Technology Surface Mount (IRL3103S)HEXFET Power MOSFET Low-profile through-hole (IRL3103L)D 175C Operating TemperatureVDSS = 30V Fast Switching Fully Avalanche RatedRDS(on) = 12mDescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toID = 64Aachieve ext
6.2. Size:251K inchange semiconductor
irl3103s.pdf
isc N-Channel MOSFET Transistor IRL3103SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
6.3. Size:252K inchange semiconductor
irl3103s(2).pdf
isc N-Channel MOSFET Transistor IRL3103SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
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