IRL3202PBF Todos los transistores

 

IRL3202PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL3202PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

IRL3202PBF Datasheet (PDF)

 ..1. Size:132K  international rectifier
irl3202pbf.pdf pdf_icon

IRL3202PBF

PD -95659IRL3202PbFHEXFET Power MOSFETl Advanced Process Technologyl Optimized for 4.5V-7.0V Gate DriveDl Ideal for CPU Core DC-DC Converters VDSS = 20Vl Fast Switchingl Lead-FreeRDS(on) = 0.016GDescriptionID = 48AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing

 7.1. Size:125K  international rectifier
irl3202s.pdf pdf_icon

IRL3202PBF

PD 9.1675BIRL3202SPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface MountVDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC ConvertersRDS(on) = 0.016W Fast SwitchingGDescription ID = 48ASThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedpr

 7.2. Size:89K  international rectifier
irl3202.pdf pdf_icon

IRL3202PBF

PD 9.1695AIRL3202PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Optimized for 4.5V-7.0V Gate DriveVDSS = 20V Ideal for CPU Core DC-DC Converters Fast SwitchingRDS(on) = 0.016WGDescriptionID = 48AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing techniq

 9.1. Size:126K  international rectifier
irl3215.pdf pdf_icon

IRL3202PBF

PD- 91792IRL3215HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 150V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.166 Fast SwitchingG Fully Avalanche RatedID = 12A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SM1F02NSF | 2SK1197 | ISCPL322D | GT130N03D5 | FQPF4N60

 

 
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