IRL3202PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL3202PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 48 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 800 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRL3202PBF MOSFET
IRL3202PBF Datasheet (PDF)
irl3202pbf.pdf

PD -95659IRL3202PbFHEXFET Power MOSFETl Advanced Process Technologyl Optimized for 4.5V-7.0V Gate DriveDl Ideal for CPU Core DC-DC Converters VDSS = 20Vl Fast Switchingl Lead-FreeRDS(on) = 0.016GDescriptionID = 48AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing
irl3202s.pdf

PD 9.1675BIRL3202SPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface MountVDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC ConvertersRDS(on) = 0.016W Fast SwitchingGDescription ID = 48ASThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedpr
irl3202.pdf

PD 9.1695AIRL3202PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Optimized for 4.5V-7.0V Gate DriveVDSS = 20V Ideal for CPU Core DC-DC Converters Fast SwitchingRDS(on) = 0.016WGDescriptionID = 48AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing techniq
irl3215.pdf

PD- 91792IRL3215HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 150V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.166 Fast SwitchingG Fully Avalanche RatedID = 12A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per
Otros transistores... IRL2910PBF , IRL2910SPBF , IRL3102PBF , IRL3102SPBF , IRL3103D2PBF , IRL3103LPBF , IRL3103PBF , IRL3103SPBF , 2N7002 , IRL3302SPBF , IRL3303LPBF , IRL3303PBF , IRL3303SPBF , IRHY57034CM , IRHY57130CM , IRHY57133CMSE , IRHY57230CMSE .
History: SFF9140M | NTMFS5C450NT3G | RU30L40M-C | B640 | AOD2910
History: SFF9140M | NTMFS5C450NT3G | RU30L40M-C | B640 | AOD2910



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