IRL3202PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3202PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 69 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 48 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO220AB

 Búsqueda de reemplazo de IRL3202PBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRL3202PBF datasheet

 ..1. Size:132K  international rectifier
 irl3202pbf.pdf pdf_icon

IRL3202PBF

PD -95659 IRL3202PbF HEXFET Power MOSFET l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive D l Ideal for CPU Core DC-DC Converters VDSS = 20V l Fast Switching l Lead-Free RDS(on) = 0.016 G Description ID = 48A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing

 7.1. Size:125K  international rectifier
 irl3202s.pdf pdf_icon

IRL3202PBF

PD 9.1675B IRL3202S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount VDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters RDS(on) = 0.016W Fast Switching G Description ID = 48A S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced pr

 7.2. Size:89K  international rectifier
 irl3202.pdf pdf_icon

IRL3202PBF

PD 9.1695A IRL3202 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Optimized for 4.5V-7.0V Gate Drive VDSS = 20V Ideal for CPU Core DC-DC Converters Fast Switching RDS(on) = 0.016W G Description ID = 48A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniq

 9.1. Size:126K  international rectifier
 irl3215.pdf pdf_icon

IRL3202PBF

PD- 91792 IRL3215 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.166 Fast Switching G Fully Avalanche Rated ID = 12A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

MOSTRAR MÁS

Otros transistores... IRL2910PBF, IRL2910SPBF, IRL3102PBF, IRL3102SPBF, IRL3103D2PBF, IRL3103LPBF, IRL3103PBF, IRL3103SPBF, MMIS60R580P, IRL3302SPBF, IRL3303LPBF, IRL3303PBF, IRL3303SPBF, IRHY57034CM, IRHY57130CM, IRHY57133CMSE, IRHY57230CMSE