IRL3202PBF. Аналоги и основные параметры

Наименование производителя: IRL3202PBF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 69 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 48 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 100 ns

Cossⓘ - Выходная емкость: 800 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm

Тип корпуса: TO220AB

Аналог (замена) для IRL3202PBF

- подборⓘ MOSFET транзистора по параметрам

 

IRL3202PBF даташит

 ..1. Size:132K  international rectifier
 irl3202pbf.pdf pdf_icon

IRL3202PBF

PD -95659 IRL3202PbF HEXFET Power MOSFET l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive D l Ideal for CPU Core DC-DC Converters VDSS = 20V l Fast Switching l Lead-Free RDS(on) = 0.016 G Description ID = 48A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing

 7.1. Size:125K  international rectifier
 irl3202s.pdf pdf_icon

IRL3202PBF

PD 9.1675B IRL3202S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount VDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters RDS(on) = 0.016W Fast Switching G Description ID = 48A S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced pr

 7.2. Size:89K  international rectifier
 irl3202.pdf pdf_icon

IRL3202PBF

PD 9.1695A IRL3202 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Optimized for 4.5V-7.0V Gate Drive VDSS = 20V Ideal for CPU Core DC-DC Converters Fast Switching RDS(on) = 0.016W G Description ID = 48A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniq

 9.1. Size:126K  international rectifier
 irl3215.pdf pdf_icon

IRL3202PBF

PD- 91792 IRL3215 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.166 Fast Switching G Fully Avalanche Rated ID = 12A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

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