All MOSFET. IRL3202PBF Datasheet

 

IRL3202PBF Datasheet and Replacement


   Type Designator: IRL3202PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO220AB
 

 IRL3202PBF substitution

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IRL3202PBF Datasheet (PDF)

 ..1. Size:132K  international rectifier
 irl3202pbf.pdf pdf_icon

IRL3202PBF

PD -95659IRL3202PbFHEXFET Power MOSFETl Advanced Process Technologyl Optimized for 4.5V-7.0V Gate DriveDl Ideal for CPU Core DC-DC Converters VDSS = 20Vl Fast Switchingl Lead-FreeRDS(on) = 0.016GDescriptionID = 48AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing

 7.1. Size:125K  international rectifier
 irl3202s.pdf pdf_icon

IRL3202PBF

PD 9.1675BIRL3202SPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface MountVDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC ConvertersRDS(on) = 0.016W Fast SwitchingGDescription ID = 48ASThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedpr

 7.2. Size:89K  international rectifier
 irl3202.pdf pdf_icon

IRL3202PBF

PD 9.1695AIRL3202PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Optimized for 4.5V-7.0V Gate DriveVDSS = 20V Ideal for CPU Core DC-DC Converters Fast SwitchingRDS(on) = 0.016WGDescriptionID = 48AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing techniq

 9.1. Size:126K  international rectifier
 irl3215.pdf pdf_icon

IRL3202PBF

PD- 91792IRL3215HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 150V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.166 Fast SwitchingG Fully Avalanche RatedID = 12A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per

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Datasheet: IRL2910PBF , IRL2910SPBF , IRL3102PBF , IRL3102SPBF , IRL3103D2PBF , IRL3103LPBF , IRL3103PBF , IRL3103SPBF , MMIS60R580P , IRL3302SPBF , IRL3303LPBF , IRL3303PBF , IRL3303SPBF , IRHY57034CM , IRHY57130CM , IRHY57133CMSE , IRHY57230CMSE .

History: SWI100R10VT | FDJ128NF077 | MPSP65M390 | MPSA65M380B | STP11NM50N | APT20M120JCU3 | IPP057N06N3G

Keywords - IRL3202PBF MOSFET datasheet

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 IRL3202PBF replacement

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