IRL3303PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3303PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1 V

trⓘ - Tiempo de subida: 200 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TO220AB

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IRL3303PBF datasheet

 ..1. Size:1331K  international rectifier
 irl3303pbf.pdf pdf_icon

IRL3303PBF

PD - 94887 IRL3303PbF HEXFET Power MOSFET Lead-Free www.irf.com 1 12/11/03 IRL3303PbF 2 www.irf.com IRL3303PbF www.irf.com 3 IRL3303PbF 4 www.irf.com IRL3303PbF www.irf.com 5 IRL3303PbF 6 www.irf.com IRL3303PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations D.U.T Low Stray Inductance Ground Plane Low Leakage Inductance

 7.1. Size:292K  international rectifier
 irl3303lpbf irl3303spbf.pdf pdf_icon

IRL3303PBF

PD - 95578 IRL3303LPbF IRL3303SPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRL3303S) VDSS = 30V l Low-profile through-hole (IRL3303L) l 175 C Operating Temperature RDS(on) = 0.026 l Fast Switching G l Fully Avalanche Rated ID = 38A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utili

 7.2. Size:158K  international rectifier
 irl3303s irl3303l.pdf pdf_icon

IRL3303PBF

PD - 9.1323B IRL3303S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 30V Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175 C Operating Temperature RDS(on) = 0.026 Fast Switching G Fully Avalanche Rated ID = 38A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques

 7.3. Size:103K  international rectifier
 irl3303.pdf pdf_icon

IRL3303PBF

PD - 9.1322B IRL3303 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.026 Fast Switching G Fully Avalanche Rated ID = 38A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistan

MOSTRAR MÁS

Otros transistores... IRL3102SPBF, IRL3103D2PBF, IRL3103LPBF, IRL3103PBF, IRL3103SPBF, IRL3202PBF, IRL3302SPBF, IRL3303LPBF, 60N06, IRL3303SPBF, IRHY57034CM, IRHY57130CM, IRHY57133CMSE, IRHY57230CMSE, IRHY57234CMSE, IRHY57Z30CM, IRHY597034CM