All MOSFET. IRL3303PBF Datasheet

 

IRL3303PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRL3303PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 68 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 16 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
   Maximum Drain Current |Id|: 38 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 200 nS
   Drain-Source Capacitance (Cd): 340 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
   Package: TO220AB

 IRL3303PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL3303PBF Datasheet (PDF)

 ..1. Size:1331K  international rectifier
 irl3303pbf.pdf

IRL3303PBF IRL3303PBF

PD - 94887IRL3303PbFHEXFET Power MOSFET Lead-Freewww.irf.com 112/11/03IRL3303PbF2 www.irf.comIRL3303PbFwww.irf.com 3IRL3303PbF4 www.irf.comIRL3303PbFwww.irf.com 5IRL3303PbF6 www.irf.comIRL3303PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout ConsiderationsD.U.T Low Stray Inductance Ground Plane Low Leakage Inductance

 7.1. Size:292K  international rectifier
 irl3303lpbf irl3303spbf.pdf

IRL3303PBF IRL3303PBF

PD - 95578IRL3303LPbFIRL3303SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRL3303S)VDSS = 30Vl Low-profile through-hole (IRL3303L)l 175C Operating TemperatureRDS(on) = 0.026l Fast SwitchingGl Fully Avalanche RatedID = 38Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutili

 7.2. Size:158K  international rectifier
 irl3303s irl3303l.pdf

IRL3303PBF IRL3303PBF

PD - 9.1323BIRL3303S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 30V Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175C Operating Temperature RDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 38ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

 7.3. Size:103K  international rectifier
 irl3303.pdf

IRL3303PBF IRL3303PBF

PD - 9.1322BIRL3303HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 38ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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