IRL3303SPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3303SPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1 V

Qgⓘ - Carga de la puerta: 26 nC

trⓘ - Tiempo de subida: 200 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TO263

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IRL3303SPBF datasheet

 ..1. Size:292K  international rectifier
 irl3303lpbf irl3303spbf.pdf pdf_icon

IRL3303SPBF

PD - 95578 IRL3303LPbF IRL3303SPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRL3303S) VDSS = 30V l Low-profile through-hole (IRL3303L) l 175 C Operating Temperature RDS(on) = 0.026 l Fast Switching G l Fully Avalanche Rated ID = 38A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utili

 6.1. Size:158K  international rectifier
 irl3303s irl3303l.pdf pdf_icon

IRL3303SPBF

PD - 9.1323B IRL3303S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 30V Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175 C Operating Temperature RDS(on) = 0.026 Fast Switching G Fully Avalanche Rated ID = 38A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques

 7.1. Size:103K  international rectifier
 irl3303.pdf pdf_icon

IRL3303SPBF

PD - 9.1322B IRL3303 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.026 Fast Switching G Fully Avalanche Rated ID = 38A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistan

 7.2. Size:1331K  international rectifier
 irl3303pbf.pdf pdf_icon

IRL3303SPBF

PD - 94887 IRL3303PbF HEXFET Power MOSFET Lead-Free www.irf.com 1 12/11/03 IRL3303PbF 2 www.irf.com IRL3303PbF www.irf.com 3 IRL3303PbF 4 www.irf.com IRL3303PbF www.irf.com 5 IRL3303PbF 6 www.irf.com IRL3303PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations D.U.T Low Stray Inductance Ground Plane Low Leakage Inductance

MOSTRAR MÁS

Otros transistores... IRL3103D2PBF, IRL3103LPBF, IRL3103PBF, IRL3103SPBF, IRL3202PBF, IRL3302SPBF, IRL3303LPBF, IRL3303PBF, IRFP064N, IRHY57034CM, IRHY57130CM, IRHY57133CMSE, IRHY57230CMSE, IRHY57234CMSE, IRHY57Z30CM, IRHY597034CM, IRHY597130CM