All MOSFET. IRL3303SPBF Datasheet

 

IRL3303SPBF Datasheet and Replacement


   Type Designator: IRL3303SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO263
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IRL3303SPBF Datasheet (PDF)

 ..1. Size:292K  international rectifier
irl3303lpbf irl3303spbf.pdf pdf_icon

IRL3303SPBF

PD - 95578IRL3303LPbFIRL3303SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRL3303S)VDSS = 30Vl Low-profile through-hole (IRL3303L)l 175C Operating TemperatureRDS(on) = 0.026l Fast SwitchingGl Fully Avalanche RatedID = 38Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutili

 6.1. Size:158K  international rectifier
irl3303s irl3303l.pdf pdf_icon

IRL3303SPBF

PD - 9.1323BIRL3303S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 30V Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175C Operating Temperature RDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 38ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

 7.1. Size:103K  international rectifier
irl3303.pdf pdf_icon

IRL3303SPBF

PD - 9.1322BIRL3303HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 38ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan

 7.2. Size:1331K  international rectifier
irl3303pbf.pdf pdf_icon

IRL3303SPBF

PD - 94887IRL3303PbFHEXFET Power MOSFET Lead-Freewww.irf.com 112/11/03IRL3303PbF2 www.irf.comIRL3303PbFwww.irf.com 3IRL3303PbF4 www.irf.comIRL3303PbFwww.irf.com 5IRL3303PbF6 www.irf.comIRL3303PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout ConsiderationsD.U.T Low Stray Inductance Ground Plane Low Leakage Inductance

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STT3P2UH7 | IRFP21N60L | IXTA08N120P | AP2318GEN-HF | UPA2756GR | STD6N60M2

Keywords - IRL3303SPBF MOSFET datasheet

 IRL3303SPBF cross reference
 IRL3303SPBF equivalent finder
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