IRHY7230CM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHY7230CM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 50 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO257AA

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IRHY7230CM Datasheet (PDF)

..1. Size:300K international rectifier
irhy7230cm irhy9130cm irhy9230cm.pdf

The documentation and process conversion measures necessary to comply with this revision INCH-POUND shall be completed by 1 June 2014. MIL-PRF-19500/615G 1 April 2014 SUPERSEDING MIL-PRF-19500/615F 10 July 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D,

..2. Size:105K international rectifier
irhy7230cm.pdf

PD - 91273CIRHY7230CMJANSR2N7381RADIATION HARDENED200V, N-CHANNELPOWER MOSFETREF:MIL-PRF-19500/614THRU-HOLE (TO-257AA)RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID QPL Part Number IRHY7230CM 100K Rads (Si) 0.40 9.4A JANSR2N7381 IRHY3230CM 300K Rads (Si) 0.40 9.4A JANSF227381 IRHY4230CM 600K Rads (Si) 0.40 9.4A JANSG2N73

9.1. Size:110K international rectifier
irhy7g30cmse.pdf

PD - 93973DRADIATION HARDENED IRHY7G30CMSEPOWER MOSFET1000V, N-CHANNELTHRU-HOLE (TO-257AA)RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) IDIRHY7G30CMSE 100K Rads (Si) 15 1.2AInternational Rectifiers RADHardTM HEXFET MOSFETTO-257AAtechnology provides high performance power MOSFETsfor space applications. This technology has ove

9.2. Size:531K international rectifier
irhy7130cm.pdf

The documentation and process conversion measures necessary to comply with this revision INCH-POUND shall be completed by 18 June 2014. MIL-PRF-19500/614J 18 April 2014 SUPERSEDING MIL-PRF-19500/614H 13 May 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D,

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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