IRHY7230CM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHY7230CM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO257AA

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IRHY7230CM datasheet

 ..1. Size:300K  international rectifier
 irhy7230cm irhy9130cm irhy9230cm.pdf pdf_icon

IRHY7230CM

The documentation and process conversion measures necessary to comply with this revision INCH-POUND shall be completed by 1 June 2014. MIL-PRF-19500/615G 1 April 2014 SUPERSEDING MIL-PRF-19500/615F 10 July 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D,

 ..2. Size:105K  international rectifier
 irhy7230cm.pdf pdf_icon

IRHY7230CM

PD - 91273C IRHY7230CM JANSR2N7381 RADIATION HARDENED 200V, N-CHANNEL POWER MOSFET REF MIL-PRF-19500/614 THRU-HOLE (TO-257AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY7230CM 100K Rads (Si) 0.40 9.4A JANSR2N7381 IRHY3230CM 300K Rads (Si) 0.40 9.4A JANSF227381 IRHY4230CM 600K Rads (Si) 0.40 9.4A JANSG2N73

 9.1. Size:110K  international rectifier
 irhy7g30cmse.pdf pdf_icon

IRHY7230CM

PD - 93973D RADIATION HARDENED IRHY7G30CMSE POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-257AA) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHY7G30CMSE 100K Rads (Si) 15 1.2A International Rectifier s RADHardTM HEXFET MOSFET TO-257AA technology provides high performance power MOSFETs for space applications. This technology has ove

 9.2. Size:531K  international rectifier
 irhy7130cm.pdf pdf_icon

IRHY7230CM

The documentation and process conversion measures necessary to comply with this revision INCH-POUND shall be completed by 18 June 2014. MIL-PRF-19500/614J 18 April 2014 SUPERSEDING MIL-PRF-19500/614H 13 May 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D,

MOSTRAR MÁS

Otros transistores... IRHY57234CMSE, IRHY57Z30CM, IRHY597034CM, IRHY597130CM, IRHY597230CM, IRHY67434CM, IRHY67C30CM, IRHY7130CM, IRF640, IRHY9130CM, IRHY9230CM, IRHYB597034CM, IRHYB597Z30CM, IRHYB67130CM, IRHYB67134CM, IRHYB67230CM, IRHYK57133CMSE