IRHY7230CM Specs and Replacement

Type Designator: IRHY7230CM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO257AA

IRHY7230CM substitution

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IRHY7230CM datasheet

 ..1. Size:300K  international rectifier
 irhy7230cm irhy9130cm irhy9230cm.pdf pdf_icon

IRHY7230CM

The documentation and process conversion measures necessary to comply with this revision INCH-POUND shall be completed by 1 June 2014. MIL-PRF-19500/615G 1 April 2014 SUPERSEDING MIL-PRF-19500/615F 10 July 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D,... See More ⇒

 ..2. Size:105K  international rectifier
 irhy7230cm.pdf pdf_icon

IRHY7230CM

PD - 91273C IRHY7230CM JANSR2N7381 RADIATION HARDENED 200V, N-CHANNEL POWER MOSFET REF MIL-PRF-19500/614 THRU-HOLE (TO-257AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY7230CM 100K Rads (Si) 0.40 9.4A JANSR2N7381 IRHY3230CM 300K Rads (Si) 0.40 9.4A JANSF227381 IRHY4230CM 600K Rads (Si) 0.40 9.4A JANSG2N73... See More ⇒

 9.1. Size:110K  international rectifier
 irhy7g30cmse.pdf pdf_icon

IRHY7230CM

PD - 93973D RADIATION HARDENED IRHY7G30CMSE POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-257AA) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHY7G30CMSE 100K Rads (Si) 15 1.2A International Rectifier s RADHardTM HEXFET MOSFET TO-257AA technology provides high performance power MOSFETs for space applications. This technology has ove... See More ⇒

 9.2. Size:531K  international rectifier
 irhy7130cm.pdf pdf_icon

IRHY7230CM

The documentation and process conversion measures necessary to comply with this revision INCH-POUND shall be completed by 18 June 2014. MIL-PRF-19500/614J 18 April 2014 SUPERSEDING MIL-PRF-19500/614H 13 May 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D,... See More ⇒

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Detailed specifications: IRHY57234CMSE, IRHY57Z30CM, IRHY597034CM, IRHY597130CM, IRHY597230CM, IRHY67434CM, IRHY67C30CM, IRHY7130CM, IRF640, IRHY9130CM, IRHY9230CM, IRHYB597034CM, IRHYB597Z30CM, IRHYB67130CM, IRHYB67134CM, IRHYB67230CM, IRHYK57133CMSE

Keywords - IRHY7230CM MOSFET specs

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