IRFIZ34GPBF Todos los transistores

 

IRFIZ34GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFIZ34GPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 46 nC
   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO220F

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IRFIZ34GPBF Datasheet (PDF)

 ..1. Size:2985K  international rectifier
irfiz34g irfiz34gpbf.pdf

IRFIZ34GPBF
IRFIZ34GPBF

IRFIZ34G, SiHFIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.050f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 46 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 22 Low T

 ..2. Size:1301K  international rectifier
irfiz34gpbf.pdf

IRFIZ34GPBF
IRFIZ34GPBF

PD - 94861IRFIZ34GPbF Lead-Free12/03/03Document Number: 91188 www.vishay.com1IRFIZ34GPbFDocument Number: 91188 www.vishay.com2IRFIZ34GPbFDocument Number: 91188 www.vishay.com3IRFIZ34GPbFDocument Number: 91188 www.vishay.com4IRFIZ34GPbFDocument Number: 91188 www.vishay.com5IRFIZ34GPbFDocument Number: 91188 www.vishay.com6IRFIZ34GPbFTO-220 Full

 6.1. Size:273K  international rectifier
irfiz34g.pdf

IRFIZ34GPBF
IRFIZ34GPBF

 6.2. Size:2984K  vishay
irfiz34g sihfiz34g.pdf

IRFIZ34GPBF
IRFIZ34GPBF

IRFIZ34G, SiHFIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.050f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 46 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 22 Low T

 6.3. Size:275K  inchange semiconductor
irfiz34g.pdf

IRFIZ34GPBF
IRFIZ34GPBF

iscN-Channel MOSFET Transistor IRFIZ34GFEATURESLow drain-source on-resistance:RDS(ON) 50m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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